相关论文: Signature of multilayer graphene strain-controlled…

In twisted van der Waals materials, local atomic relaxation can alter the underlying electronic structure. Characterizing lattice reconstruction and its susceptibility to strain is essential for understanding emergent electronic states,…

We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of…

We study the effect of a uniform pseudomagnetic field, induced by a strain in a monolayer and double layer of gapped graphene, acting on excitons. For our analysis it is crucial that the pseudomagnetic field acts on the charges of the…

Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric…

Recent low-temperature electron transport experiments in high-quality graphene rely on a technique of doped graphene leads, where the coupling between the graphene flake and its metallic contacts is increased by locally tuning graphene to…

Many of the experiments in twisted bilayer graphene (TBG) differ from each other in terms of the details of their phase diagrams. Few controllable aspects aside, this discrepancy is largely believed to be arising from the presence of a…

Electron transport in graphene under a laser-modulated barrier is studied in the presence of an energy gap, a scalar potential, and a uniaxial zigzag strain. The transfer-matrix approach is used with the boundary conditions to derive the…

The quantum anomalous Hall (QAH) insulator is uniquely characterized by the topological Chern number C. Controlling the Chern number is a key step toward functional topological electronics and enables access to exotic quantum phases beyond…

Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical…

Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene…

With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some…

The extraordinary electronic properties of graphene, such as its continuously gate-variable ambipolar field effect and the resulting steep change in resistivity, provided the main thrusts for the rapid advance of graphene electronics. The…

Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications.…

We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…

Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…

Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the…

We point out a practical way to induce a finite charge Hall conductivity in graphene via an off-diagonal strain. Our conclusions are based on a general analysis and supported by numerical examples. The interplay between a substrate-induced…

We present a rigorous microscopic theory of the extrinsic spin Hall effect in disordered graphene based on a nonperturbative quantum diagrammatic treatment incorporating skew scattering and anomalous---impurity…

Materials with massless Dirac fermions can possess exceptionally strong and widely tunable optical nonlinearities. Experiments on graphene monolayer have indeed found very large third-order nonlinear responses, but the reported variation of…

Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…