相关论文: Signature of multilayer graphene strain-controlled…
We investigate the emergence of topological Hall-like (THE-like) signals in disordered multidomain ferromagnets. Non-monotonic behavior in Hall resistivity, commonly attributed to topological spin textures such as skyrmions, is produced in…
The remarkable electronic properties of graphene have fueled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor its electronic…
The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities…
Recent experiments on pentalayer rhombohedral graphene moir\'e superlattices have observed the quantum anomalous Hall effect at moir\'e filling factor of $\nu = 1$ and various fractional values. These phenomena are attributed to a flat…
We consider the effect of uniaxial strain on ballistic transport in graphene, across single and multiple tunneling barriers. Specifically, we show that applied strain not only shifts the position of the Dirac points in reciprocal space, but…
Time-reversal symmetry breaking superconductors are exotic phases of matter with fascinating properties, which are, however, encountered rather sparsely. Here we identify the possibility of realizing such a superconducting ground state that…
Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in…
The quantum Hall effect in curved space has been the subject of many theoretical investigations in the past, but devising a physical system to observe this effect is hard. Many works have indicated that electronic excitations in strained…
The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…
The quantum Hall effect has been predicted and discovered in various condensed-matter systems. A promising quantum material for such topological effects is graphene. We report the numerical observation of a curvature-induced spin-Hall…
Stacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries host topological edge states, imaging them has been…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…
Twisted van der Waals materials have been shown to host a variety of tunable electronic structures. Here we put forward twisted trilayer graphene (TTG) as a platform to emulate heavy fermion physics. We demonstrate that TTG hosts extended…
We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($\nu_{\mathrm{T}}$) and bottom…
Graphene is a very promising test-bed for the field of electron quantum optics. However, a fully tunable and coherent electronic beam splitter is still missing. We report the demonstration of electronic beam splitters in graphene that…
Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that…
Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
Nonlinear anomalous Hall effect is the Berry curvature dipole induced second-order Hall voltage or temperature difference in response to a longitudinal electric field or temperature gradient. These are the prominent Hall responses in time…