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We numerically study the thermal stability properties of computer memory storage realized by a magnetic ellipse. In the case of practical magnetic random-access memory devices, the bit can form a spin texture during switching events. To…

介观与纳米尺度物理 · 物理学 2015-06-04 Silas Hoffman , Yaroslav Tserkovnyak , Pedram Khalili Amiri , Kang L. Wang

Magnetic refrigeration can provide an environmentally friendly technology to reduce significantly the energy consumption of cooling devices. To retain the sustainability of the device, all parts must be made from abundant materials,…

Electrical manipulation of magnetization via current-induced spin orbit torques offers a promising route toward nonvolatile and energy efficient spintronic devices. In this work, we present a comprehensive investigation of SOTs in…

介观与纳米尺度物理 · 物理学 2026-03-03 Dhananjaya Mahapatra , Anudeepa Ghosh , Harekrishna Bhunia , Bipul Pal , Partha Mitra

This study investigates the temperature-dependent quasi-static magnetoelectric (ME) response of electrically poled lead-free Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$-NiFe$_2$O$_4$ (NKBT-NFO) laminated composites. The aim is to understand the…

Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…

介观与纳米尺度物理 · 物理学 2019-06-04 Hiroshi Imamura , Rie Matsumoto

Tungsten ditelluride (WTe$_2$) exhibits extremely large and unsaturated magnetoresistance (MR). Due to the large spatially extensions of Te-5p and W-5d orbitals, the electronic properties of WTe$_2$ are sensitive to the lattice structures,…

材料科学 · 物理学 2017-03-09 Gang Liu , Huimei Liu , Jian Zhou , Xiangang Wan

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature…

强关联电子 · 物理学 2015-06-24 V. Senz , T. Ihn , T. Heinzel , K. Ensslin , G. Dehlinger , D. Grützmacher , U. Gennser , E. H. Hwang , S. Das Sarma

In the field of rehabilitation and neuroscience shape memory alloys play a crucial role as lightweight actuators. Devices are exploiting the shape memory effect by transforming heat into mechanical work. In rehabilitation applications,…

材料科学 · 物理学 2021-01-12 Umut D. Cakmak , Zoltan Major , Michael Fischlschweiger

Hexagonal CoSn is a newly-discovered frustrated kagome metal. It shows close-to-textbook flat bands and orbital-selective Dirac fermions, which are largely associated with its strongly correlated Co-3$d$ orbitals. Because correlated…

强关联电子 · 物理学 2023-09-21 Li Huang , Haiyan Lu

A model of magnetic interactions in the ordered ferromagnetic FePt is proposed on the basis of first-principles calculations of non-collinear magnetic configurations and shown to be capable of explaining recent measurements of magnetic…

流体动力学 · 物理学 2015-06-26 O. N. Mryasov , U. Nowak , K. Y. Guslienko , R. W. Chantrell

Using density functional theory calculations with spin-orbit coupling (SOC), we report on the temperature-dependent thermodynamical properties of Pb: electrical resistivity, thermal expansion (TE), heat capacity, bulk modulus and its…

材料科学 · 物理学 2025-03-13 Félix Antoine Goudreault , Samuel Poncé , Feliciano Giustino , Michel Côté

Metastability is fundamental not only to phase ordering and transitions, but also to a broad range of modern technologies, from memory devices to metallic glasses. In condensed-matter physics, charge density waves (CDWs) offer versatile…

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Memristor technologies have been rapidly maturing for the past decade to support the needs of emerging memory, artificial synapses, logic gates and bio-signal processing applications. So far, however, most concepts are developed by…

新兴技术 · 计算机科学 2021-10-11 Thomas Abbey , Alexantrou Serb , Spyros Stathopoulos , Loukas Michalas , Themis Prodromakis

For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT…

The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric substrate and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a…

介观与纳米尺度物理 · 物理学 2017-10-11 Serban Lepadatu , Melvin M. Vopson

The temperature variation effect of shape anisotropy on the coercivity, HC(T), for the aligned Stoner-Wohlfarth (SW) soft ferromagnets, such as fcc Ni, fcc Co and bcc Fe, are investigated within the framework of Neel-Brown (N-B) analysis.…

材料科学 · 物理学 2009-11-13 Lin He , Chinping Chen

Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…

应用物理 · 物理学 2024-07-08 Zhe Zhang , Zhuoyi Li , Yuzhe Chen , Fangyuan Zhu , Yu Yan , Yao Li , Liang He , Jun Du , Rong Zhang , Jing Wu , Xianyang Lu , Yongbing Xu

Room-temperature electrically-tuned coercivity and nonvolatile multi-states magnetization switching is crucial for next-generation low-power 2D spintronics. However, most methods have limited ability to adjust the coercivity of…

材料科学 · 物理学 2024-01-03 Gaojie Zhang , Hao Wu , Li Yang , Wen Jin , Bichen Xiao , Wenfeng Zhang , Haixin Chang
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