相关论文: Pure spin current injection of single-layer monoch…

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…

Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study…

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…

We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a…

Rapid injection of spin polarization into an ensemble of nuclear spins is a problem of broad interest, spanning dynamic nuclear polarization (DNP) to quantum information science. We report on a strategy to boost the spin injection rate by…

Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current…

We study experimentally the possibility to utilize pulses of pure spin current, produced via the nonlocal spin injection mechanism, to generate short packets of spin waves propagating in nanoscale magnetic waveguides. The spatially and…

Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…

As is well known the absorption of circularly polarized light in semiconductors results in optical orientation of electron spins and helicity-dependent electric photocurrent, and the absorption of linearly polarized light is accompanied by…

A new current induced spin-torque transfer effect has been observed in a single ferromagnetic layer without resorting to multilayers. At a specific current density of one polarity injected from a point contact, abrupt resistance changes due…

GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a…

Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the…

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable…

Properties are discussed of a ferromagnetic junction of the type "rod contacting with film". Very high current density of the order of $10^9$ A/cm$^2$ may be achieved in the contact region. We show it can lead to inversion of population of…

Monolayer transition metal dichalcogenides (TMDs) with strong spin-orbit coupling combined with broken inversion symmetry, leading to a coupling of spin and valley degrees of freedom, make these materials highly interesting for potential…

A systematic investigation of spin injection behavior in Au/FM (FM = Fe and Ni) multilayers is performed using the superdiffusive spin transport theory. By exciting the nonmagnetic layer, the laser-induced hot electrons may transfer spin…

A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive…

We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find that the symmetry mismatch of the Fe minority-spin states with the semiconductor…

Spin dynamics of a single electron and an exciton confined in CdTe/ZnTe quantum dot is investigated by polarization-resolved correlation spectroscopy. Spin memory effects extending over at least a few tens of nanoseconds have been directly…