相关论文: Pure spin current injection of single-layer monoch…

We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}\leftrightarrow p_z$ hybridization due to intra-atomic…

We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed…

We study the superfluidity of a pure spin current that is a spin current without mass current. We examine two types of pure spin currents, planar and circular, in spin-1 Bose gas. For the planar current, it is usually unstable, but can be…

Equal-spin Cooper pairs are pivotal building blocks for superconducting spintronics devices. In recent experiments, unusual behavior was observed in ferromagnet/ferromagnet/superconductor devices when a precession of the magnetization was…

Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $\mu$m) are grown by…

We report nearly complete preservation of "spin memory" between optical absorption and photoluminescence (PL) in nanometer slabs of GaSe pumped with up to 0.2 eV excess energy. At cryogenic temperatures, the initial degree of circular…

Graphene is a very promising material in spintronics due to both its high electric mobility and low intrinsic spin-obit coupling. Electronic spins can be injected from a ferromagnetic material through a tunnel contact into graphene owing to…

Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…

Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive.…

In the active search for potentially promising candidates for spintronic applications, we focus on the intermetallic ferromagnetic Mn5Ge3 compound and perform accurate first-principles FLAPW calculations within density functional theory.…

Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short…

Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs…

The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of their particular structure and potential…

In spinelectronics the spin degree of freedom is used to transmit and store information. Ideally this occurs without net charge currents in order to avoid energy dissipation due to Joule heating. To this end the ability to create pure spin…

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination…

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…

We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the…

Magnetic resonance with ensembles of electron spins is nowadays performed in frequency ranges up to 240 GHz and in corresponding magnetic fields of up to 10 T. However, experiments with single electron and nuclear spins so far only reach…

Proximity-induced spin-orbit coupling in graphene has led to the observation of intriguing phenomena like time-reversal invariant $\mathbb{Z}_2$ topological phase and spin-orbital filtering effects. An understanding of the effect of…