相关论文: Pure spin current injection of single-layer monoch…

We elucidate light-induced orbital and spin current through nonlinear response theory, which generalizes the well-known bulk photovoltaic effect in centrosymmetric broken materials from charge to the spin and orbital degrees of freedom. We…

Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We…

Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess…

The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…

We report on nonlocal transport in superconductor hybrid structures, with ferromagnetic as well as normal-metal tunnel junctions attached to the superconductor. In the presence of a strong Zeeman splitting of the density of states, both…

Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which…

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been…

We use time-resolved Faraday rotation to measure coherent spin dynamics in colloidal CdSe quantum dots charged in an electrochemical cell at room temperature. Filling of the 1Se electron level is demonstrated by the bleaching of the…

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to…

We theoretically study spin and charge currents through finite-size two-dimensional $s$-wave superconductor/uniform ferromagnet/s-wave superconductor (SFS) junctions with intrinsic spin-orbit interactions (ISOIs) using a quasiclassical…

A single electron floating on the surface of a condensed noble-gas liquid or solid can act as a spin qubit with ultralong coherence time, thanks to the extraordinary purity of such systems. Previous studies suggest that the electron spin…

We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that…

We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…

Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…

Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers.…

Both tin monosulfide (SnS) and tin disulfide (SnS2) are thermodynamically stable layered materials with potential for spin-valleytronic devices and photodetectors. Notably, monolayer SnS, owing to its low symmetry, exhibits interesting…

Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose…

In the realm of two-dimensional materials magnetic and transport properties of a unique representative $-$ Fe$_3$GeTe$_2$ $-$ attract ever increasing attention. Here, we use a developed first-principles method for calculating laser-induced…

We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was…

We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 \mu m in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$…