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相关论文: Pure spin current injection of single-layer monoch…

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Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited…

Topological insulators have surface states with a remarkable helical spin structure, with promising prospects for applications in spintronics. Strategies for generating spin polarized currents, such as the use of magnetic contacts and…

介观与纳米尺度物理 · 物理学 2014-05-21 Rodrigo A. Muniz , J. E. Sipe

Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also…

介观与纳米尺度物理 · 物理学 2025-08-19 Eoin Dolan , Zhendong Chi , Haozhe Yang , Luis E. Hueso , Fèlix Casanova

A charge flow through a magnetic tunnel junction (MTJ) leads to the generation of a spin-polarized current which exerts a spin-transfer torque (STT) on the magnetization. When the density of applied direct current exceeds some critical…

介观与纳米尺度物理 · 物理学 2019-07-10 A. I. Nikitchenko , N. A. Pertsev

Charge-to-spin conversion in various material systems is the key for the fundamental understanding of spin-orbitronis as well as the development of efficient means to manipulate the magnetization. We report the direct spatial imaging of…

介观与纳米尺度物理 · 物理学 2018-07-04 Yang Liu , Jean Besbas , Yi Wang , Pan He , Mengji Chen , Dapeng Zhu , Yang Wu , Jong Min Lee , Lan Wang , Jisoo Moon , Nikesh Koirala , Seongshik Oh , Hyunsoo Yang

Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The…

介观与纳米尺度物理 · 物理学 2011-03-28 G. M. Müller , M. Oestreich , M. Römer , J. Hübner

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…

材料科学 · 物理学 2009-11-10 A. M. Bratkovsky , V. V. Osipov

Semiconductor spin lasers are distinguished from their conventional counterparts by the presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized carriers to photons provides important opportunities for the…

介观与纳米尺度物理 · 物理学 2021-01-27 Gaofeng Xu , David Cao , Velimir Labinac , Igor Žutić

We propose a new method of spin squeezing of atomic spin, based on the interactions between atoms and off-resonant light which are known as paramagnetic Faraday rotation and fictitious magnetic field of light. Since the projection process,…

量子物理 · 物理学 2009-11-10 M. Takeuchi , S. Ichihara , T. Takano , M. Kumakura , T. Yabuzaki , Y. Takahashi

Spin transport via electrons is typically plagued by Joule heating and short decay lengths due to spin-flip scattering. It is known that dissipationless spin currents can arise when using conventional superconducting contacts, yet this has…

介观与纳米尺度物理 · 物理学 2016-04-26 Sol Jacobsen , Iryna Kulagina , Jacob Linder

Femtosecond laser light can transfer spin angular momentum between magnetic subspecies that exhibit hybridized valence bands within an alloy or compound, and represents the fastest route for manipulating the magnetization of a material. To…

We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length…

介观与纳米尺度物理 · 物理学 2012-07-10 M. H. D. Guimarães , A. Veligura , P. J. Zomer , T. Maassen , I. J. Vera-Marun , N. Tombros , B. J. van Wees

We study high-field spin transport of electrons in a quasi one-dimensional channel of a $GaAs$ gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport…

介观与纳米尺度物理 · 物理学 2009-09-29 S. Pramanik , S. bandyopadhyay , M. Cahay

Spin injection across interfaces driven by ultrashort optical pulses on femtosecond timescales constitutes a new way to design spintronics applications. Targeted utilization of this phenomenon requires knowledge of the efficiency of…

材料科学 · 物理学 2022-12-29 P. Elliott , A. Eschenlohr , J. Chen , S. Shallcross , U. Bovensiepen , J. K. Dewhurst , S. Sharma

Spin noise spectroscopy has become a widespread technique to extract information on spin dynamics in atomic and solid-state systems, in a potentially non-invasive way, through the optical probing of spin fluctuations. Here we experimentally…

Hybrid devices based on spin-crossover (SCO)/2D heterostructures grant a highly sensitive platform to detect the spin transition in the molecular SCO component and tune the properties of the 2D material. However, the fragility of the SCO…

A normally incident light of linear polarization injects a pure spin current in a strip of 2-dimensional electron gas with spin-orbit coupling. We report observation of an electric current with a butterfly-like pattern induced by such a…

介观与纳米尺度物理 · 物理学 2007-06-19 Xiao-Dong Cui , Shun-Qing Shen , Jian Li , Weikun Ge , Fu-Chun Zhang

We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both…

介观与纳米尺度物理 · 物理学 2015-06-15 T. Ishikura , Z. Cui , L-K. Liefeith , K. Konishi , Kanji Yoh

Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly…

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel…

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