Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

V. F. Motsnyi; V. I. Safarov; J. De Boeck; J. Das; W. Van Roy; E. Goovaerts; G. Borghs

doi:10.1063/1.1491010

Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

Materials Science 2009-11-07 v1

Authors: V. F. Motsnyi , V. I. Safarov , J. De Boeck , J. Das , W. Van Roy , E. Goovaerts , G. Borghs

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Abstract

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.

Keywords

spintronics spin polarization and magnetic phenomena

Cite

@article{arxiv.cond-mat/0110240,
  title  = {Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure},
  author = {V. F. Motsnyi and V. I. Safarov and J. De Boeck and J. Das and W. Van Roy and E. Goovaerts and G. Borghs},
  journal= {arXiv preprint arXiv:cond-mat/0110240},
  year   = {2009}
}

Comments

5 pages, 4 figures

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