相关论文: Stimulated emission at 1.54 $\mu$m from Erbium/Oxy…
We demonstrate yellow laser emission using silicate glass fiber as the gain medium. By employing core pumping using widely available GaN diode lasers with emission at 445 nm, we show that Dy3+-doped aluminosilicate glass fiber can be…
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the…
An efficient silicon based light source presents an unreached goal in the field of photonics, due to Silicons indirect electronic band structure preventing direct carrier recombination and subsequent photon emission. Here we utilize…
Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can…
An efficient method to fabricate transparent glass ceramic fibers containing in-situ grown Er3+-doped oxide nanoparticles is presented. Characterization of the drawn fibers exhibits low loss (0.4 dB/m) and broadened Er3+ emission spectrum.…
We have fabricated light emitting diodes (LEDs) with Schottky contacts on Si-nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room…
Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other 2D materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are…
Avalanche photodiodes used for greenhouse gas sensing often use a mesa-structure that suffers from high surface leakage currents and edge breakdown. In this paper, we report 2-micron InGaAs/GaAsSb superlattice (SL) based planar PIN diodes…
We demonstrate a high-performance, single-mode Er:Ta2O5 microring laser monolithically integrated on a silicon platform via a customized Damascene process. The Er:Ta2O5 gain medium exhibits a low propagation loss of 0.73 dB/cm and a high…
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active…
Triggered sources of entangled photons play crucial roles in almost any existing protocol of quantum information science. The possibility to generate these non-classical states of light with high speed and using electrical pulses could…
Microlaser with multiple lasing bands is critical in various applications, such as full-colour display, optical communications and computing. Here, we propose a simple and efficient method for homogeneously doping rare earth elements into a…
Light source is indispensable component in on-chip system. Compared with hybrid or heterogeneous integrated laser, monolithically integrated laser is more suitable for high density photonic integrated circuit (PIC) since the capability of…
The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects…
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K…
We demonstrate a C-band wavelength-tunable microlaser with an Er3+ doped high quality (~1.02x10^6) lithium niobate microdisk resonator. With a 976 nm continuous-wave pump laser, lasing action can be observed at a pump power threshold as low…
Solution-processed organic-inorganic lead halide perovskites have recently emerged as promising gain media for tunable semiconductor lasers, and have come to rival inorganic III-V group semiconductors as the material candidate for…
Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics.…
Excitonic stimulated emission provides a promising mechanism and route to achieve low-threshold semiconductor lasers for micro-nano optoelectronic integrations. However, excitonic stimulated emission from quantum structure-free…
Erbium-doped waveguide amplifiers have captured great attentions in recent years due to the rapid advance of photonic integration materials and fabrication techniques. In this work, a compact erbium-doped thin-film lithium niobate waveguide…