相关论文: Stimulated emission at 1.54 $\mu$m from Erbium/Oxy…
Large-volume deployment of Si-based Seebeck generators can be foreseen only if polycrystalline rather than single crystalline materials can be actually used. The aim of this study was therefore to verify whether polycrystalline Si films…
Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550…
Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping…
Optically addressable spin impurities in crystals along with device engineering provide an attractive route to realizing quantum technologies in the solid state, but reconciling disparate emitter and host material constraints for a given…
The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources. However, the reported emission rates are far off what can be achieved by…
Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…
The reliable measurement and accurate control of the temperature within nanophotonic devices is a key prerequisite for their application in both classical and quantum technologies. Established approaches use sensors that are attached in…
In this contribution, a comprehensive experimental study of photoluminescence from Pr3+/Dy3+ co-doped selenide-chalcogenide multimode fiber samples is discussed. The selenide-chalcogenide multimode fiber samples co-doped with 500 ppm of…
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long…
Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated…
Erbium doped solids are potential candidates for the realization of a quantum memory for photons at telecommunication wavelengths. The implementation of quantum memory proposals in rare earth ion doped solids require spectral tailoring of…
Erbium-doped crystals offer a versatile platform for hybrid quantum devices because they combine magnetically-sensitive electron-spin transitions with telecom-wavelength optical transitions. At the high doping concentrations necessary for…
A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting…
Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical…
Above-threshold light emission from plasmonic tunnel junctions, when emitted photons have energies significantly higher than the energy scale of the incident electrons, has attracted much recent interest in nano-optics, while the underlying…
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…
Recent advances in supercontinuum light generation have been remarkable, particularly in the context of highly nonlinear photonic integrated waveguides. In this study, we thoroughly investigate supercontinuum (SC) generation in high-index…
To date, the laser cooling of rubidium atoms has inevitably relied on 780 nm cooling light corresponding to the first excited state $5\mathrm{P}_{3/2}$. Surprisingly, we demonstrate laser cooling directly utilizing 420 nm blue light for…
Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode…
Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical…