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相关论文: Single-Molecule Magnet Mn$_{12}$ on GaAs-supported…

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A detailed study of the electronic transport and magnetic properties of Fe$_{1-x}$Cu$_x$Cr$_2$S$_4$ ($x \leq 0.5$) on single crystals is presented. The resistivity is investigated for $2 \leq T \leq 300$ K in magnetic fields up to 14 Tesla…

We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally…

应用物理 · 物理学 2021-06-04 Guangnan Zhou , Fanming Zeng , Rongyu Gao , Qing Wang , Kai Cheng , Guangrui Xia , Hongyu Yu

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

介观与纳米尺度物理 · 物理学 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…

Samples of La0.7Ca0.3Mn1-xGaxO3 with x = 0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport…

强关联电子 · 物理学 2012-09-25 Marek Pekala , Jan Mucha , Benedicte Vertruyen , Rudi Cloots , Marcel Ausloos

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn$_3$Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at $T_1$ = 275 K and $T_2$ =…

材料科学 · 物理学 2018-04-03 N. H. Sung , F. Ronning , J. D. Thompson , E. D. Bauer

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to…

We present a theory of magnetic anisotropy in ${\rm III}_{1-x}{\rm Mn}_{x}{\rm V}$ diluted magnetic semiconductors with carrier-induced ferromagnetism. The theory is based on four and six band envelope functions models for the valence band…

材料科学 · 物理学 2009-10-31 M. Abolfath , T. Jungwirth , J. Brum , A. H. MacDonald

We present a detailed investigation of the mechanisms at play for the incorporation of In and Mg on the GaN(0001) surface during plasma-assisted molecular beam epitaxy (PAMBE). First, we have studied the kinetics of In desorption in the…

材料科学 · 物理学 2020-06-26 Erdi Kuşdemir , Caroline Chèze , Raffaella Calarco

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while…

材料科学 · 物理学 2009-11-13 G. Giovannetti , P. A. Khomyakov , G. Brocks , V. M. Karpan , J. van den Brink , P. J. Kelly

We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on…

材料科学 · 物理学 2015-05-27 J. Slawinska , P. Dabrowski , I. Zasada

The effect of Ir substitution for Os in CeOs2Al10, with an unusually high Neel temperature of T~28.5K, has been studied by high-resolution neutron diffraction and magnetization measurements. A small amount of Ir (~ 8%) results in a…

强关联电子 · 物理学 2015-06-16 D. D. Khalyavin , D. T. Adroja , P. Manuel , J. Kawabata , K. Umeo , T. Takabatake , A. M. Strydom

We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used,…

材料科学 · 物理学 2009-11-10 Raimundo R. dos Santos , J. d'Albuquerque e Castro , L. E. Oliveira

We study the effects of metallic doping on the electronic properties of graphene using density functional theory in the local density approximation in the presence of a local charging energy (LDA+U). The electronic properties are sensitive…

材料科学 · 物理学 2009-11-13 B. Uchoa , C. -Y. Lin , A. H. Castro Neto

We present an experimental study of the {\em nonlinear} susceptibility of Mn$_{12}$ single-molecule magnets. We investigate both their thermal-equilibrium and dynamical nonlinear responses. The equilibrium results show the sensitivity of…

介观与纳米尺度物理 · 物理学 2016-08-16 R. López-Ruiz , F. Luis , V. González , A. Millán , J. L. García-Palacios

Magnetic force microscopy (MFM) signals have recently been detected from whole pieces of mechanically exfoliated graphene and molybdenum disulfide (MoS2) nanosheets and magnetism of the two nanomaterials was claimed based on these…

介观与纳米尺度物理 · 物理学 2015-03-05 Lu Hua Li , Ying Chen

We use time-of-flight (ToF) inelastic neutron scattering (INS) spectroscopy to investigate the doping dependence of magnetic excitations across the phase diagram of NaFe$_{1-x}$Co$_x$As with $x=0, 0.0175, 0.0215, 0.05,$ and $0.11$. The…

Thin film effects on the Magnetocrystalline Anisotropy Energy (MAE) of MnN were studied using density functional theory (DFT). Initially, strain effects on bulk MnN were considered as a proxy for lattice-matching induced strain and a linear…

材料科学 · 物理学 2025-12-16 Robert A. Lawrence , Matt I. J. Probert

Tailoring and controlling magnetic properties is an important factor for materials design. Here, we present a case study for Ni-based Heusler compounds of the type Ni$_2$YZ with Y = Mn, Fe, Co and Z = B, Al, Ga, In, Si, Ge, Sn based on…

材料科学 · 物理学 2018-07-18 Heike C. Herper

In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about…

介观与纳米尺度物理 · 物理学 2015-05-13 Timm Lohmann , Klaus v. Klitzing , Jurgen H. Smet