中文
相关论文

相关论文: Two-dimensional hole gas in organic semiconductors

200 篇论文

In a series of recent experiments, Kravchenko and colleagues observed unexpectedly that a two-dimensional electron gas in zero magnetic field can be a conductor. The two-dimensionality was imposed by confining the electron gas to move…

强关联电子 · 物理学 2009-10-30 Philip Phillips , Yi Wan , Ivar Martin , Sergey Knysh , Denis Dalidovich

We discuss properties of strongly correlated two-dimensional electron gas in semiconductor layers at low electron concentrations assuming that the electron liquid is close to crystalization. Analogy with the theory of 3He is emphasized.

介观与纳米尺度物理 · 物理学 2009-10-31 B. Spivak

Increasing demand for computational power has initiated the hunt for energy efficient and stable memory devices. This is the overarching motivation behind the recent rise of \textit{orbitronics}, which looks to harness the orbital angular…

介观与纳米尺度物理 · 物理学 2026-03-06 James H. Cullen , Dimitrie Culcer

Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric…

The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing…

Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The…

介观与纳米尺度物理 · 物理学 2007-05-23 Wei Lu , Jie Xiang , Brian P. Timko , Yue Wu , Charles M. Lieber

The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two…

材料科学 · 物理学 2013-12-16 Y. Z. Chen , N. Pryds , J. R. Sun , B. G. Shen , S. Linderoth

Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm) quantum devices. Here, we investigate the low-temperature…

Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…

Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…

强关联电子 · 物理学 2019-10-15 V. T. Dolgopolov

Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…

介观与纳米尺度物理 · 物理学 2018-12-20 S. Schmult , S. Wirth , V. V. Solovyev , R. Hentschel , A. Wachowiak , A. Großer , I. V. Kukushkin , T. Mikolajick

The electron-hole liquid, which features a macroscopic population of correlated electrons and holes, may offer a path to room temperature semiconductor devices that harness collective electronic phenomena. We report on the gas-to-liquid…

介观与纳米尺度物理 · 物理学 2019-02-05 Trevor B. Arp , Dennis Pleskot , Vivek Aji , Nathaniel M. Gabor

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at ${\epsilon}$-AlGaO3 / ${\epsilon}$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in…

材料科学 · 物理学 2020-09-09 Praneeth Ranga , Sung Beom Cho , Rohan Mishra , Sriram Krishnamoorthy

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse…

介观与纳米尺度物理 · 物理学 2011-07-25 C. Rossler , K. -D. Hof , S. Manus , S. Ludwig , J. P. Kotthaus , J. Simon , A. W. Holleitner , D. Schuh , W. Wegscheider

Introduction of a Josephson field effect transistor (JoFET) concept sparked active research on proximity effects in semiconductors. Induced superconductivity and electrostatic control of critical current has been demonstrated in…

介观与纳米尺度物理 · 物理学 2019-06-26 Zhong Wan , Aleksandr Kazakov , Michael J. Manfra , Loren N. Pfeiffer , Ken W. West , Leonid P. Rokhinson

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…

介观与纳米尺度物理 · 物理学 2007-05-23 K. Lai , P. D. Ye , W. Pan , D. C. Tsui , S. A. Lyon , M. Muhlberger , F. Schaffler

Two-dimensional layered and atomically thin elemental superconductors may be key ingredients in next-generation quantum technologies, if they can be stabilized and integrated into heterostructured devices under ambient conditions. However,…

Semiconductor interfaces, such as these existing in multilayer structures (e.g., quantum wells (QWs)), are interesting because of their ability to form 2D electron gases (2DEGs), in which charge carriers behave completely differently than…

介观与纳米尺度物理 · 物理学 2019-05-22 Aleksandr Kazakov , Tomasz Wojtowicz

The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics.…

Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crystals, then fabricate few-layer test structures while…