The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO3 upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO3 thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO3 via oxygen vacancy creation, which exhibits a high carrier density of ∼7.72∗1014/cm2 and a high room-temperature mobility of ~18 cm2/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.
@article{arxiv.2011.13106,
title = {A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity},
author = {Zexin Feng and Peixin Qin and Yali Yang and Han Yan and Huixin Guo and Xiaoning Wang and Xiaorong Zhou and Yuyan Han and Jiabao Yi and Dongchen Qi and Xiaojiang Yu and Mark B. H. Breese and Xin Zhang and Haojiang Wu and Hongyu Chen and Hongjun Xiangb and Chengbao Jiang and Zhiqi Liu},
journal= {arXiv preprint arXiv:2011.13106},
year = {2021}
}