English

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Materials Science 2015-02-24 v1

Abstract

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.

Keywords

Cite

@article{arxiv.1502.06364,
  title  = {Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface},
  author = {Yunzhong Chen and Felix Trier and Takeshi Kasama and Dennis V. Christensen and Nicolas Bovet and Han Li and Zoltan I. Balogh and Karl T. S. Thydén and Wei Zhang and Sadegh Yazdi and Poul Norby and Nini Pryds and Søren Linderoth},
  journal= {arXiv preprint arXiv:1502.06364},
  year   = {2015}
}

Comments

19 pages, 4 figs; Nano Letters,2015, published online