中文
相关论文

相关论文: Two-dimensional hole gas in organic semiconductors

200 篇论文

We report on the formation of a two-dimensional electron gas (2DEG) at the bare surface of (111) oriented SrTiO3. Angle resolved photoemission experiments reveal highly itinerant carriers with a 6-fold symmetric Fermi surface and strongly…

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…

介观与纳米尺度物理 · 物理学 2015-06-22 W. Pan , E. Dimakis , G. T. Wang , T. D. Moustakas , D. C. Tsui

We introduce an elementary model for the electrostatic self-consistent potential in a two-dimensional electron gas. By considering the perpendicular degree of freedom arising from the electron tunneling out of the system plane, we predict a…

介观与纳米尺度物理 · 物理学 2007-05-23 J. C. Flores , V. Bellani , F. Dominguez-Adame

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of…

介观与纳米尺度物理 · 物理学 2013-09-19 M. M. Uddin , H. W. Liu , K. F. Yang , K. Nagase , K. Sekine , C. K. Gaspe , T. D. Mishima , M. B. Santos , Y. Hirayama

Electrons confined to two dimensions display an unexpected diversity of behaviors as they are cooled to absolute zero. Noninteracting electrons are predicted to eventually "localize" into an insulating ground state, and it has long been…

超导电性 · 物理学 2017-12-05 Nicholas P. Breznay , Aharon Kapitulnik

Recent technological advances in controlling materials have developed methods to produce idealized two-dimensional (2D) electron systems such as heterogeneous interfaces, molecular-beam-epitaxy (MBE) grown atomic layers, exfoliated thin…

超导电性 · 物理学 2017-03-13 Yu Saito , Tsutomu Nojima , Yoshihiro Iwasa

Recent progress in two-dimensional superconductors with atomic-scale thicknesses is reviewed mainly from the experimental point of view. The superconducting systems treated here involve a variety of materials and forms: elemental-metal…

超导电性 · 物理学 2016-11-17 Takashi Uchihashi

We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional…

介观与纳米尺度物理 · 物理学 2009-11-11 J. A. Seamons , D. R. Tibbetts , J. L. Reno , M. P. Lilly

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable…

In spite of the interest in the two-dimensional electron gases (2DEGs) experimentally found at surfaces and interfaces, important uncertainties remain about the observed insulator--metal transitions (IMTs). Here we show how an explicit…

介观与纳米尺度物理 · 物理学 2024-10-10 Daniel Bennett , Pablo Aguado-Puente , Emilio Artacho , Nicholas Bristowe

The electronic structure and thermodynamic stability of tetragonal $\rm{BiFeO_3}$(001) surfaces have been investigated using density functional theory. In this work, four different structures having different lattice constants with two…

材料科学 · 物理学 2022-05-13 Soumyasree Jena , Sanjoy Datta

Two-dimensional electron systems (2DES) are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or…

Gate-controllable two dimensional systems with in-plane modulation of properties could serve as highly tunable effective media. Intuitively, such systems may bring novel functionality provided that the period of the lateral modulation is…

介观与纳米尺度物理 · 物理学 2019-11-04 Alexey Shupletsov , Alexander Kuntsevich , Martin Nunuparov , Alexander Rakhmanov , Kirill Prikhodko

We review some of our recent experimental studies on low-carrier concentration, mesoscopic two-dimensional electron gases (m2DEGs). The m2DEGs show a range of striking characteristics including a complete avoidance of the strongly localised…

介观与纳米尺度物理 · 物理学 2016-11-21 Vijay Narayan , Michael Pepper , David Ritchie

We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9…

凝聚态物理 · 物理学 2009-10-31 Jongsoo Yoon , C. C. Li , D. Shahar , D. C. Tsui , M. Shayegan

We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron…

介观与纳米尺度物理 · 物理学 2008-07-02 J. A. Keogh , K. Das Gupta , H. E. Beere , D. A. Ritchie , M. Pepper

The advent of bottom-up atomic manipulation heralded a new horizon for attainable information density, as it allowed a bit of information to be represented by a single atom. The discrete spacing between atoms in condensed matter has thus…

介观与纳米尺度物理 · 物理学 2009-11-13 Christopher R. Moon , Laila S. Mattos , Brian K. Foster , Gabriel Zeltzer , Hari C. Manoharan

A novel 2-dimensional electron gas (2DEG) system with high-mobility was discovered at the interface of two perovskite oxides, a polar orthorhombic perovskite LaScO3 (LSO) and a nonpolar cubic perovskite BaSnO3 (BSO). Upon depositing the LSO…

应用物理 · 物理学 2021-10-13 Hyeongmin Cho , Dowon Song , Youjung Kim , Bongju Kim , Kookrin Char

Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface…

We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of…