相关论文: Two-dimensional hole gas in organic semiconductors
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We…
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam…
Monolayer films of transition metal dichalcogenides (in particular, MoS2, MoSe2, WS2, and WSe2) can be considered as ideal systems for the studies of high-temperature electron-hole liquids. The quasi-two-dimensional nature of electrons and…
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
The two-dimensional (2D) homogeneous electron gas (HEG) is a fundamental model in quantum many-body physics. It is important to theoretical and computational studies, where exchange-correlation energies computed in it serve as the…
Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of…
The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
Two-dimensional electron gases (2DEGs) formed at complex oxide interfaces offer a unique platform to engineer quantum nanostructures. However, scalable fabrication of locally addressable devices in these materials remains challenging. Here,…
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high…
Electrons and holes can spontaneously form excitons and condense in a semimetal or semiconductor, as predicted decades ago. This type of Bose condensation can happen at much higher temperatures in comparison with dilute atomic gases.…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
We investigate the striking absence of strong localisation observed in mesoscopic two-dimensional electron gases (2DEGs) (Baenninger et al 2008 Phys. Rev. Lett. 100 1016805, Backes et al 2015 Phys. Rev. B 92 235427) even when their…
We study zigzag interfaces between insulating compounds that are isostructural to graphene, specifically II-VI, III-V and IV-IV two-dimensional (2D) honeycomb insulators. We show that these one-dimensional interfaces are polar, with a net…
2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbed for fundamental physics and device applications. While the discussion of the physical origins of this phenomenon continues, the recent discovery of oxide 2DEGs at…
We report on the experimental realization of homogeneous two-dimensional (2D) Fermi gases trapped in a box potential. In contrast to harmonically trapped gases, these homogeneous 2D systems are ideally suited to probe local as well as…
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems.…
We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the…
Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler…