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A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low…

介观与纳米尺度物理 · 物理学 2013-12-13 Fei Liu , Xiaoyan Liu , Jinfeng Kang , Yi Wang

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides…

Two-dimensional van der Waals (vdW) materials exhibit a broad palette of unique and superlative properties, including high electrical and thermal conductivities, paired with the ability to exfoliate or grow and transfer single layers onto a…

材料科学 · 物理学 2023-02-22 Cameron Foss , Zlatan Aksamija

Understanding the physics underlying energy dissipation is necessary for the effective thermal management of devices based on two-dimensional (2D) materials and requires insights into the interplay between heat generation and diffusion in…

介观与纳米尺度物理 · 物理学 2020-05-08 Zhun-Yong Ong , Myung-Ho Bae

The hunt for high temperature superfluidity has received new impetus from the discovery of atomically thin stable materials. Electron-hole superfluidity in coupled MoSe2-WSe2 monolayers is investigated using a mean-field multiband model…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

材料科学 · 物理学 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in…

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

Many recent advances in our understanding of two-dimensional (2D) electron systems stem from van der Waals (vdW) heterostructures. The assembly process relies on the weak bonding across interfaces between layered vdW compounds, making it…

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…

介观与纳米尺度物理 · 物理学 2022-02-25 Sagnik Banerjee , Koustav Jana , Anirban Basak , Michael S Fuhrer , Dimitrie Culcer , Bhaskaran Muralidharan

Effectively tuning magnetic state by using current is essential for novel spintronic devices. Magnetic van der Waals (vdW) materials have shown superior properties for the applications of magnetic information storage based on the efficient…

材料科学 · 物理学 2025-09-30 Shaohua Yan , Shangjie Tian , Yang Fu , Fanyu Meng , Zhiteng Li , Hechang Lei , Shouguo Wang , Xiao Zhang

We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and…

介观与纳米尺度物理 · 物理学 2020-02-19 D. Logoteta , M. G. Pala , J. Choukroun , P. Dollfus , G. Iannaccone

In the pursuit of higher critical temperature of superconductivity, quasi-flat electronic bands and van Hove singularities in two dimensions (2D) have emerged as a potential approach to enhance Cooper pairing on the basis of mean-field…

All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…

材料科学 · 物理学 2025-10-02 B. Liu , X. Zhang , W. Hou , H. Feng , Zhengei Dai , Zhi-Xin Guo

Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…

介观与纳米尺度物理 · 物理学 2026-04-24 Mahdi Pourfath , Tibor Grasser

Charged domain walls (CDW) in ferroelectrics are emerging as functional interfaces with potential applications in nonvolatile memory, logic, and neuromorphic computing. However, CDWs in conventional ferroelectrics are vertical, buried, or…

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

Van der Waals (vdW) Josephson junctions can possibly accelerate the development of advanced superconducting device that utilizes the unique properties of two-dimensional (2D) transition metal dichalcogenide (TMD) superconductors such as…

超导电性 · 物理学 2022-11-17 Chuanwen Zhao , Xin Yi , Qiao Chen , Chengyu Yan , Shun Wang

Generators of random sequences used in high-end applications such as cryptography rely on entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in…

量子物理 · 物理学 2022-05-02 Nithin Abraham , Kenji Watanabe , Takashi Taniguchi , Kausik Majumdar

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…