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相关论文: Valley pseudospin in monolayer MoSi2N4 and MoSi2As…

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In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as…

材料科学 · 物理学 2021-01-01 Si Li , Weikang Wu , Xiaolong Feng , Shan Guan , Wanxiang Feng , Yugui Yao , Shengyuan A. Yang

Two-dimensional (2D) semiconductors have attracted tremendous interests as natural passivation and atomically thin channels that could facilitate continued transistor scaling. However, air-stable 2D semiconductors with high performance were…

介观与纳米尺度物理 · 物理学 2021-11-29 Jun-Sheng Huang , Ping Li , Xiao-Xiong Ren , Zhi-Xin Guo

Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal,…

MA2Z4 monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi2N4 and WSi2N4) were recently synthesized, theory predicts interesting (opto)electronic…

A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this…

材料科学 · 物理学 2012-10-19 Ting Cao , Ji Feng , Junren Shi , Qian Niu , Enge Wang

Valleytronics, that uses the valley index or valley pseudospin to encode information, has emerged as an interesting field of research in two-dimensional (2D) systems with promising device applications. Spin-orbit coupling (SOC) and…

材料科学 · 物理学 2023-08-14 Sutapa Chattopadhyay , Anjali Kshirsagar

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics.…

Motivated by the recently synthesized layered material MoSi2N4, we investigated excitonic response of quasiparticle of monolayer MoSi2N4 by using G0W0 and Bethe-Salpeter equation (BSE) calculations. With a dually sandwiched structure…

材料科学 · 物理学 2022-05-18 Dan Liang , Shi Xu , Pengfei Lu , Yongqing Cai

Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the…

介观与纳米尺度物理 · 物理学 2017-06-27 Yunqiu , Luo , Jinsong Xu , Tiancong Zhu , Guanzhong Wu , Elizabeth J. McCormick , Wenbo Zhan , Mahesh R. Neupane , Roland K. Kawakami

Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for developing new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic…

介观与纳米尺度物理 · 物理学 2021-11-24 Rajibul Islam , Barun Ghosh , Carmine Autieri , Sugata Chowdhury , Arun Bansil , Amit Agarwal , Bahadur Singh

Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to…

介观与纳米尺度物理 · 物理学 2017-07-21 Guohua Wei , David A. Czaplewski , Erik J. Lenferink , Teodor K. Stanev , Il Woong Jung , Nathaniel P. Stern

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct…

材料科学 · 物理学 2021-09-22 Shoeib Babaee Touski , Nayereh Ghobadi

Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer…

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication…

介观与纳米尺度物理 · 物理学 2026-05-05 Abir Mukherjee , Kajal Sharma , Ajit K Katiyar , Saranya Das , Samit K Ray , Samaresh Das

Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer…

材料科学 · 物理学 2016-08-12 Paul Z. Hanakata , Alexandra Carvalho , David K. Campbell , Harold S. Park

Altermagnets represent a newly identified third class of collinear magnets and have recently emerged as a focal point in condensed matter physics. In this work, through first-principles calculations and theoretical analysis, we identify…

材料科学 · 物理学 2025-12-15 An-Dong Fan , Yong-Kun Wang , Jin-Yang Li , Si Li

The band structure of a monolayer MoS$_2$ comprises of spin-split subbands, owing to the mutual presence of broken inversion symmetry and strong spin-orbit coupling. In the conduction band, spin-valley coupled subbands cross each other at…

介观与纳米尺度物理 · 物理学 2022-11-09 K. Sonowal , D. V. Boev , A. V. Kalameitsev , V. M. Kovalev , I. G. Savenko

First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these…

材料科学 · 物理学 2026-01-14 Ghulam Hussaina , Abdus Samad , Majeed Ur Rehmanc , Giuseppe Cuono , Carmine Autieri
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