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Interface structures in complex oxides remain one of the active areas of condensed matter physics research, largely enabled by recent advances in scanning transmission electron microscopy (STEM). Yet the nature of the STEM contrast in which…

To clarify the cause of the low channel conductivity at the SiO2/4H-SiC interface, the wavefunction at the SiC conduction band minimum was calculated using density functional theory under an applied electric field. We found that the…

材料科学 · 物理学 2023-06-05 Hironori Yoshioka , Jun-Ichi Iwata , Yu-ichiro Matsushita

Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to…

材料科学 · 物理学 2015-05-28 R. Colby , M. L. Bolen , M. A. Capano , E. A. Stach

In this article, we report the influence of the interfacial roughness on the thermal boundary conductance between two crystals, using molecular dynamics. We show evidence of a transition between two regimes, depending on the interfacial…

材料科学 · 物理学 2015-06-23 Samy Merabia , Konstantinos Termentzidis

Muon spin rotation with low-energy muons (LE{\mu}SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of $\approx$\SI{200}{\nano\meter}. In this…

The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…

介观与纳米尺度物理 · 物理学 2015-05-20 SungGeun Kim , Abhijeet Paul , Mathieu Luisier , Timothy B. Boykin , Gerhard Klimeck

Modern microelectronic devices are composed of interfaces between a large number of materials, many of which are in amorphous or polycrystalline phases. Modeling such non-crystalline materials using first-principles methods such as density…

材料科学 · 物理学 2023-10-12 Pratik Brahma , Krishnakumar Bhattaram , Sayeef Salahuddin

Thin films of silicon oxide (SiOx) are mixtures of semiconductive c-Si nanoclusters (NC) embedded in an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables the NC to form semiconductive filamentary…

软凝聚态物质 · 物理学 2010-09-14 J. C. Phillips

Line intensity maps (LIMs) are in principle sensitive to a large amount of information about faint, distant galaxies which are invisible to conventional surveys. However, actually extracting that information from a confused,…

宇宙学与河外天体物理 · 物理学 2019-05-28 Daniel N. Pfeffer , Patrick C. Breysse , George Stein

This letter presents a novel high impedance fault (HIF) detection approach using a convolutional neural network (CNN). Compared to traditional artificial neural networks, a CNN offers translation invariance and it can accurately detect HIFs…

信号处理 · 电气工程与系统科学 2019-04-19 Rui Fan , Tianzhixi Yin

We study numerically the depinning transition of driven elastic interfaces in a random-periodic medium with localized periodic-correlation peaks in the direction of motion. The analysis of the moving interface geometry reveals the existence…

无序系统与神经网络 · 物理学 2010-10-20 S. Bustingorry , A. B. Kolton , T. Giamarchi

The effect of silicon-oxide interface roughness on the weak-localization magnetoconductance of a silicon MOSFET in a magnetic field, tilted with respect to the interface, is studied. It is shown that an electron picks up a random Berry's…

介观与纳米尺度物理 · 物理学 2009-10-31 H. Mathur , Harold U. Baranger

Accurate characterization of silicon microstructures is essential for advancing microscale fabrication, quality control, and device performance. Traditional analysis using Scanning Electron Microscopy (SEM) often requires labor-intensive,…

Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…

Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure…

应用物理 · 物理学 2025-02-06 Shichen Deng , Chengdi Xiao , Jiale Yuan , Dengke Ma , Junhui Li , Nuo Yang , Hu He

Metal-semiconductor interfaces play a central role in micro and nano-electronic devices as heat dissipation or temperature drop across these interfaces can significantly affect device performance. Prediction of accurate thermal boundary…

In this paper, a quantitative evaluation model for the color quality of human-computer interaction interfaces is proposed by combining deep convolutional neural networks (CNN). By extracting multidimensional features of interface images,…

人机交互 · 计算机科学 2025-02-17 Shixiao Wang , Runsheng Zhang , Junliang Du , Ran Hao , Jiacheng Hu

Roughness of driven elastic interfaces in random media is typically understood to be characterized by a single roughness exponent $\zeta$. We show that at the depinning threshold, due to symmetry breaking caused by the direction of the…

统计力学 · 物理学 2022-10-20 Esko Toivonen , Matti Molkkari , Esa Räsänen , Lasse Laurson

Brain-Computer Interfaces (BCI) based on motor imagery translate mental motor images recognized from the electroencephalogram (EEG) to control commands. EEG patterns of different imagination tasks, e.g. hand and foot movements, are…

信号处理 · 电气工程与系统科学 2021-01-27 Alessandro Bria , Claudio Marrocco , Francesco Tortorella

Understanding the mechanism of interfacial thermal transport is crucial for thermal management of electronics. Recent experiments have shown the strong impact of interfacial roughness on inelastic phonon scattering and interfacial thermal…

介观与纳米尺度物理 · 物理学 2025-04-08 Jinyuan Xu , Yangyu Guo
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