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Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D…

We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices…

介观与纳米尺度物理 · 物理学 2020-12-08 Bablu Mukherjee , Ryoma Hayakawa , Kenji Watanabe , Takashi Taniguchi , Shu Nakaharai , Yutaka Wakayama

Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory…

应用物理 · 物理学 2021-09-01 Lan Liu , Yi Ding , Jiayi Li , Chunsen Liu , Peng Zhou

Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is…

应用物理 · 物理学 2020-09-22 Kamalakannan Ranganathan , Mor Feingenbaum , Ariel Ismach

We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions…

Recent reports on machine learning (ML) and machine vision (MV) devices have demonstrated the potentials of 2D materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi Level Pinning (FLP), power…

Led by the rise of the internet of things, the world is experiencing exponential growth of generated data. Data-driven algorithms such as signal processing and artificial neural networks are required to process and extract meaningful…

介观与纳米尺度物理 · 物理学 2024-01-24 Guilherme Migliato Marega , Hyun Goo Ji , Zhenyu Wang , Mukesh Tripathi , Aleksandra Radenovic , Andras Kis

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of…

介观与纳米尺度物理 · 物理学 2013-03-21 Simone Bertolazzi , Daria Krasnozhon , Andras Kis

Two-dimensional (2D) van der Waals (vdW) multiferroics offer an attractive platform for four-state nonvolatile memory by combining switchable ferroelectric polarization and magnetization within a single material system. However, their…

材料科学 · 物理学 2026-05-15 Zhibin Tan , Tao Wang , Hao Jin

We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…

Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena…

介观与纳米尺度物理 · 物理学 2018-08-21 Yu Wang , Erfu Liu , Anyuan Gao , Tianjun Cao , Mingsheng Long , Chen Pan , Lili Zhang , Junwen Zeng , Chenyu Wang , Weida Hu , Shi-Jun Liang , Feng Miao

Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information…

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…

材料科学 · 物理学 2025-04-01 Soumya Sarkar , Xiwen Liu , Deep Jariwala

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…

Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…

材料科学 · 物理学 2016-02-17 Qi Feng , Faguang Yan , Wengang Luo , Kaiyou Wang?

Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities.…

介观与纳米尺度物理 · 物理学 2018-11-13 N. Peimyoo , M. D. Barnes , J. D. Mehew , A. De Sanctis , I. Amit , J. Escolar , K. Anastasiou , A. P. Rooney , S. J. Haigh , S. Russo , M. F. Craciun , F. Withers

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of…

介观与纳米尺度物理 · 物理学 2017-12-21 Fan Ye , Jaesung Lee , Philip X. -L. Feng
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