相关论文: Large-Scale and Robust Multifunctional Vertically-…
In this work, we investigate the underlying physical mechanism for electric-field induced resistive switching in Au/MoS2/Au based memristive devices by combining reactive Molecular Dynamics (MD) and ab-initio quantum transport calculations.…
The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of…
Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the…
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report…
Van der Waals integration enables the creation of electronic and optoelectronic devices with unprecedented performance and novel functionalities beyond the existing material limitations. However, it is typically realized using a physical…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
Second-order nonlinear optical processes are fundamental to photonics, spectroscopy, and information technologies, with material platforms playing a pivotal role in advancing these applications. Here, we demonstrate the exceptional…
Flexible and biocompatible memristive devices are particularly attractive for bioelectronic systems due to the interest in improving computing capabilities and the motivation to interface electronics with biological systems including drug…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
We demonstrate non-volatile optical functionality by embedding multi-layer $HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
In a data-driven economy, virtually all industries benefit from advances in information technology -- powerful computing systems are critically important for rapid technological progress. However, this progress might be at risk of slowing…
Brain-inspired non-Boolean computing offers intrinsic error tolerance and parallelism, but its practical deployment is limited by the lack of compact, energy-efficient spiking hardware compatible with large-scale integration. Mott…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Two-dimensional molybdenum disulfide (MoS$_2$) featuring atomically thin thickness and unique electronic structure with favorable bandgap has been widely recognized as an attractive new material for the development of the next generation of…
Emerging non-volatile memory (NVM), or memristive, devices promise energy-efficient realization of deep learning, when efficiently integrated with mixed-signal integrated circuits on a CMOS substrate. Even though several algorithmic…