相关论文: Laser-Driven Growth of Semiconductor Nanowires fro…

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch…

Alloyed metal nanoparticles are a promising platform for plasmonically enabled hot-carrier generation, which can be used to drive photochemical reactions. Although the non-plasmonic component in these systems has been investigated for its…

Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this droplet at the liquid-solid interface. By combining in-situ transmission electron microscopy with theoretical analysis of the surface energies…

Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we…

Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration of nanowires for both nano and macro electronic circuit…

Nanoscale amplification of non-linear processes in solid-state devices opens novel applications in nano-electronics, nano-medicine or high energy conversion for example. Coupling few nano-joules laser energy at a nanometer scale for strong…

We have confirmed the presence of narrow, degenerately-doped axial silicon nanowire (SiNW) $p$-$n$ junctions via off-axis electron holography (EH). SiNWs were grown via the vapor-solid-liquid (VLS) mechanism using gold (Au) as the catalyst,…

Upgrading the productivity of nanoparticles (NPs), generated by pulsed laser ablation in liquid (PLAL), still remains challenging. Here a novel variant of PLAL was developed, where a doubled frequency Nd:YAG laser beam (532 nm, ~ 5 ns, 10…

Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…

Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered…

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis…

Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the…

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects…

When ultrathin metal films are subjected to multiple cycles of rapid melting and resolidification by a ns pulsed laser, spatially correlated interfacial nanostructures can result from a competition among several possible thin film…

Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism…

Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties,…

Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. Making SnTe into…

InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…

Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…

Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature.…