中文
相关论文

相关论文: Atomic origin for hydrogenation promoted bulk oxyg…

200 篇论文

Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) is a simple VO2 synthesis method in which V thin…

材料科学 · 物理学 2021-07-06 Ashok P , Yogesh Singh Chauhan , Amit Verma

As artificial intelligence continues to grow, so does the need for more efficient ways to process data. Besides moving from electronic to photonic circuits, a promising approach is to integrate phase-change materials. Vanadium dioxide…

介观与纳米尺度物理 · 物理学 2026-04-08 Peter Kepič , Petra Kalousková , Tomáš Šikola , Filip Ligmajer

Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with…

VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces…

We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits…

强关联电子 · 物理学 2009-09-29 A. D. Rata , A. R. Chezan , T. Hibma , M. W. Haverkort , L. H. Tjeng , H. H. Hsieh , H. J. Lin , C. T. Chen

Tin oxide aerogels were synthesized using an epoxide-assisted technique and characterized with Fourier transform infrared, X-ray diffraction, and UV-Vis to study the effects of post-synthesis annealing and peroxide treatment. While bulk tin…

材料科学 · 物理学 2024-10-02 John F. Hardy , Madison King , Stephanie Hurst , Carlo R. daCunha

Vanadium dioxide (VO$_2$) is central in the study of ultrafast photoinduced insulator-to-metal phase transitions in strongly correlated materials, and a primary candidate for next-generation light-driven devices. However, the physical…

强关联电子 · 物理学 2025-09-23 S. Mandal , P. Kumar , H. Y. Kim , Z. Pi , J. Xu , D. Chen , D. Kazenwadel , P. Baum , S. Meng , E. Goulielmakis

We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic…

Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte…

Long term stability is the most pressing issue that impedes commercialization of Vanadium Dioxide (VO2) based functional films, which show a gradual loss of relative phase transition performance, especially in humid conditions when serving…

应用物理 · 物理学 2020-04-14 Tianci Chang , Xun Cao , Ning Li , Shiwei Long , Ying Zhu , Jian Huang , Hongjie Luo , Ping Jin

Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a…

This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…

材料科学 · 物理学 2020-04-08 Robert Karsthof , Arthur Markus Anton , Friedrich Kremer , Marius Grundmann

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes drifted toward the channel/dielectric interface due to small…

材料科学 · 物理学 2010-07-19 Byungki Ryu , Hyeon-Kyun Noh , Eun-Ae Choi , K. J. Chang

The observation of electronic phase separation textures in vanadium dioxide (VO2), a prototypical electron-correlated oxide, has recently added new perspectives on the long standing debate about its metal-insulator transition and its…

We investigated nonlinear conduction in bulk single crystals of VO2 with precise temperature control. Two distinct nonequilibrium phenomena were identified: a gradual reduction of the charge gap and a current-induced insulator-metal…

强关联电子 · 物理学 2025-05-13 Akitoshi Nakano , Masato Imaizumi , Ichiro Terasaki

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 {\deg}C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is…

Metallization of initially insulating VO2 via ionic liquid electrolytes (electrolyte gating) has recently been a topic of much interest. It is clear that the metallization takes place electrochemically and there has previously been…

The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily…

BiVO$_4$ is a promising photocatalyst for efficient water oxidation, with surface reactivity determined by the structure of active catalytic sites. Surface oxidation in the presence of oxygen vacancies induces electron localization,…

Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technological applications, including optoelectronics, catalysis, and…