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Hydrogenation is an effective way to tune material property1-5. Traditional techniques for doping hydrogen atoms into solid materials are very costly due to the need for noble metal catalysis and high-temperature/pressure annealing…

材料科学 · 物理学 2018-03-09 Yuliang Chen , Zhaowu Wang , Shi Chen , Hui Ren , Liangxin Wang , Guobin Zhang , Yalin Lu , Jun Jiang , Chongwen Zou , Yi Luo

We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the…

Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically,…

材料科学 · 物理学 2016-06-22 Lishu Liu , Zengxia Mei , Aihua Tang , Alexander Azarov , Andrej Kuznetsov , Qi-Kun Xue , Xiaolong Du

Effect of doping with H and W on the properties of V2O5 and VO2 derived from V2O5 gel has been studied. It is shown that the treatment of V2O5 in low-temperature RF hydrogen plasma for 1 to 10 min. leads to either hydration of vanadium…

We present a density-functional theory study of the effects of oxygen vacancies on the structural and electronic properties of vanadium dioxide (VO$_2$). Our motivation is the reported suppression of the metal-insulator transition by oxygen…

材料科学 · 物理学 2025-11-11 Oskar Leibnitz , Peter Mlkvik , Nicola A. Spaldin , Claude Ederer

Controlling electronic population through chemical doping is one way to tip the balance between competing phases in materials with strong electronic correlations. Vanadium dioxide exhibits a first-order phase transition at around 338 K…

Vanadium dioxide (VO2) is a thermochromic material that undergoes a phase transition from a monoclinic semiconducting state to a rutile metallic state at 68 degrees C, a temperature close to room temperature. This property makes VO2…

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations…

We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the doping process takes…

Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control…

材料科学 · 物理学 2020-12-21 Min-Han Lee , Yoav Kalcheim , Javier del Valle , Ivan K. Schuller

The formation of VO2 crystalline domains in amorphous substoichiometric nanocolumnar VOx thin films subjected to an oxidation process at temperatures below 300{\deg}C has been studied. It is obtained that values of [O]/[V] above 1.9 lead to…

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim…

材料科学 · 物理学 2020-04-29 P. Ganesh , Frank Lechermann , Ilkka Kylanpaa , Jaron Krogel , Paul R. C. Kent , Olle Heinonen

In this work we study the stabilization of the orthorhombic phases in small Hf0.5Zr0.5O2 nanoparticles (average size ~ 7 nm) annealed under different oxygen partial pressures. Concentration of the oxygen vacancies, which is determined by…

Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for exploring exotic structural transformation and physical functionality. Oxygen vacancy serves as a…

材料科学 · 物理学 2025-12-19 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao , Jiahui Ji , Guowei Zhou , Huihui Ji , Xiaohong Xu

The discovery of ferroelectric HfO2 in thin films and more recently in bulk is an important breakthrough because of its silicon-compatibility and unexpectedly persistent polarization at low dimensions, but the origin of its ferroelectricity…

计算物理 · 物理学 2021-06-24 Ri He , Hongyu Wu , Shi Liu , Houfang Liu , X. Renshaw Wang , Zhicheng Zhong

Contrary to traditional approaches, high entropy oxides (HEOs) strategically employ cationic disorder to engineer tunable functionalities. This disorder, stemming from multiple elements at the same crystallographic site, disrupts local…

With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research…

Vanadium oxide (VOx) is a material of significant interest due to its metal-insulator transition (MIT) properties as well as its diverse stable antiferromagnetism depending on the valence states of V and O with distinct MIT transitions and…

The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…

强关联电子 · 物理学 2018-02-28 T. J. Huffman , D. J. Lahneman , S. L. Wang , T. Slusar , Bong-Jun Kim , Hyun-Tak Kim , M. M. Qazilbash

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical…

材料科学 · 物理学 2015-06-23 Shinbuhm Lee , Tricia L. Meyer , Sungkyun Park , Takeshi Egami , Ho Nyung Lee
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