中文
相关论文

相关论文: Ultrahigh-Q AlGaAs-on-insulator microresonators fo…

200 篇论文

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications…

光学 · 物理学 2016-08-08 Minhao Pu , Luisa Ottaviano , Elizaveta Semenova , Kresten Yvind

AlGaAs is a promising integrated nonlinear photonics material with enormous optical nonlinearity and high refractive index. Nevertheless, presently AlGaAs microring resonators exhibiting high quality factors and tight optical confinement…

The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by…

Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly…

Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in…

Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band…

光学 · 物理学 2021-02-03 Marlon Placke , Sven Ramelow

The exploration of photonic systems for quantum information processing has generated widespread interest in multiple cutting-edge research fields. Photonic frequency encoding stands out as an especially viable approach, given its natural…

Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $\chi^\left(2\right)$ and $\chi^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it…

Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being…

量子物理 · 物理学 2026-02-13 F. Baboux , G. Moody , S. Ducci

Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium…

We present a low-loss integrated photonics platform in the visible and near ultraviolet regime. Fully-etched waveguides based on atomic layer deposition (ALD) of aluminum oxide operate in a single transverse mode with $<$3 dB/cm propagation…

We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…

光学 · 物理学 2012-06-13 Wolfram H. P. Pernice , Chi Xiong , Hong X. Tang

In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…

Development of low-loss photonic components in the ultraviolet (UV) band will open new prospects for classical and quantum optics. Compared with other integrated platforms, aluminum nitride (AlN) is particularly attractive as it features an…

Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…

介观与纳米尺度物理 · 物理学 2016-01-20 X. Dai , S. Zhang , Z. Wang , G. Adamo , H. Liu , Y. Huang , C. Couteau , C. Soci

We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical anoantennas. Using a selective oxidation technique, we fabricate such epitaxial semiconductor nanoparticles on an aluminum oxide substrate. Second harmonic generation from…

Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…

We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass…

The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different…

介观与纳米尺度物理 · 物理学 2016-08-02 Christof P. Dietrich , Andrea Fiore , Mark G. Thompson , Martin Kamp , Sven Höfling
‹ 上一页 1 2 3 10 下一页 ›