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相关论文: Multi-terminal electronic transport in boron nitri…

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Hexagonal boron nitride (h-BN) has received great interest in recent years as a wide bandgap analog of graphene-derived systems. However, the thermal transport properties of h-BN, which can be critical for device reliability and…

介观与纳米尺度物理 · 物理学 2018-07-04 Puqing Jiang , Xin Qian , Ronggui Yang , Lucas Lindsay

Layered transition metal dichalcogenides (TMDs) provide an ideal platform for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order. When TMDs are reduced in thickness to the 2-D…

介观与纳米尺度物理 · 物理学 2016-11-03 Linjun Li , WeiJie Zhao , Bo Liu , Tianhua Ren , Goki Eda , Kianping Loh

The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials against contamination and degradation. It is often assumed that…

材料科学 · 物理学 2019-06-18 Xu Han , Jiangxiazi Lin , Junwei Liu , Ning Wang , Ding Pan

We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high…

介观与纳米尺度物理 · 物理学 2021-02-11 Fan Ye , Qingchang Liu , Baoxing Xu , Philip X. -L. Feng , Xian Zhang

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum…

介观与纳米尺度物理 · 物理学 2016-07-12 Gen Long , Shuigang Xu , Junying Shen , Jianqiang Hou , Zefei Wu , Tianyi Han , Jiangxiazi Lin , Wing Ki Wong , Yuan Cai , Rolf Lortz , Ning Wang

The needs for efficient heat removal and superior thermal conduction in nano/micro devices have triggered tremendous studies in low-dimensional materials with high thermal conductivity. Hexagonal boron nitride (h-BN) is believed to be one…

介观与纳米尺度物理 · 物理学 2017-03-03 Xinxia Li , Yaping Yan , Lan Dong , Jie Guo , Adili Aiyiti , Xiangfan Xu , Baowen Li

Transition-metal dichalcogenides (TMDs) are layered compounds that support many electronic phases, including various charge density waves, superconducting, and Mott insulating states. Their intercalation with magnetic ions introduces…

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…

介观与纳米尺度物理 · 物理学 2022-08-22 Li Zhang , Dong Pan , Yuanjie Chen , Jianhua Zhao , H. Q. Xu

The thermal conductivity of suspended few-layer hexagonal boron nitride (h-BN) was measured using a micro-bridge device with built-in resistance thermometers. Based on the measured thermal resistance values of 11-12 atomic layer h-BN…

The possibility to control electrokinetic transport through carbon and hexagonal boron nitride (hBN) nanotubes has recently opened new avenues for nanofluidic approaches to face outstanding challenges such as energy production and…

化学物理 · 物理学 2022-02-08 Etienne Mangaud , Marie-Laure Bocquet , Lydéric Bocquet , Benjamin Rotenberg

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a…

Polymer composites with thermally conductive nanoscale filler particles, such as graphene and hexagonal boron nitride (h-BN), are promising for certain heat transfer applications. While graphene-polymer composites have been extensively…

应用物理 · 物理学 2017-12-04 Ruimin Ma , Xiao Wan , Teng Zhang , Nuo Yang , Tengfei Luo

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it…

介观与纳米尺度物理 · 物理学 2014-11-14 André Dankert , M. Venkata Kamalakar , Abdul Wajid , R. S. Patel , Saroj P. Dash

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing…

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…

介观与纳米尺度物理 · 物理学 2025-02-06 Gaëlle Bigeard , Zineb Kerrami , François Triozon , Alessandro Cresti

Heat management becomes more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation and favorable mechanical properties is of great importance.…

Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…

介观与纳米尺度物理 · 物理学 2010-12-14 Hadar Steinberg , Dillon R. Gardner , Young S. Lee , Pablo Jarillo-Herrero

We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. By increasing the hBN grain density…

介观与纳米尺度物理 · 物理学 2025-06-06 J. E. Barrios Vargas , B. Mortazavi , A. W. Cummings , R. Martinez-Gordillo , M. Pruneda , L. Colombo , T. Rabczuk , S. Roche

Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…

材料科学 · 物理学 2017-02-16 Y. Zhao , Z. Wan , U. Hetmaniuk , M. P. Anantram

We show that the local temperature dependence of thermalized electron and phonon populations along metallic carbon nanotubes is the main reason behind this non-linear transport characteristics in the high bias regime. Our model that…

介观与纳米尺度物理 · 物理学 2009-11-11 M. A. Kuroda , J. -P. Leburton
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