相关论文: The Investigation of Negative Capacitance Vertical…

Using accurate Hybrid-Functional DFT coupled with the Non-Equilibrium Green's function (NEGF) formalism, we explore and benchmark the fundamental scaling limits of CNT-FETs against Si and 2D-material MoS$_2$ and HfS$_2$ Nanosheets,…

An ordinary superconducting quantum interference device (SQUID) contains two weak links connected in parallel. We model a multiple-wire SQUID (MW-SQUID), generalized in two ways. First, the number of weak links, which are provided by…

We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured…

Ferroelectric non-volatile capacitance-based memories enable non-destructive readout and low-power in-memory computing with 3D stacking potential. However, their limited memory window (1-10 fF/{\mu}m) requires material-device-circuit…

As the semiconductor manufacturing process technology node shrinks into the nanometer-scale, the CMOS-based Field Programmable Gate Arrays (FPGAs) face big challenges in scalability of performance and power consumption. Multi-walled Carbon…

Emerging chips with hundreds and thousands of cores require networks with unprecedented energy/area efficiency and scalability. To address this, we propose Slim NoC (SN): a new on-chip network design that delivers significant improvements…

This paper presents an improved compact model for TeraFETs employing a nonlinear transmission line approach to describe the non-uniform carrier density oscillations and electron inertia effects in the TeraFET channels. By calculating the…

When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating…

Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron…

Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost but good MS basis is usually very hard to obtain…

The end of Dennard scaling has pushed power consumption into a first order concern for current systems, on par with performance. As a result, near-threshold voltage computing (NTVC) has been proposed as a potential means to tackle the…

Advancing large-scale quantum computing requires superconducting circuits that combine long coherence times with compatibility with semiconductor technology. We investigate niobium nitride (NbN) coplanar waveguide resonators integrated with…

We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current…

We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…

Energetics and conductance in jellium modelled nanowires are investigated using the local-density-functional-based shell correction method. In analogy with studies of other finite-size fermion systems, e.g., simple-metal clusters or He-3…

Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

We describe version 2 of the SPICE dataset, a collection of quantum chemistry calculations for training machine learning potentials. It expands on the original dataset by adding much more sampling of chemical space and more data on…

A partial differential equation (PDE) was developed to describe time-dependent ligand-receptor interactions for applications in biosensing using field effect transistors (FET). The model describes biochemical interactions at the sensor…