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Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks…

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…

The results of the study of ultra-short pulse generation in continuous-wave Kerr-lens mode-locked (KLM) solid-state lasers with semiconductor saturable absorbers are presented. The issues of extremely short pulse generation are addressed in…

Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of…

A single transverse mode high pulse-energy VECSEL was developed. The GaSb based VECSEL emits at a wavelength of 2.04 microns with a peak power exceeding 500W while maintaining good beam quality. The cavity employs a Pockels cell combined…

We report on the fabrication and characterization of superconducting coplanar waveguide (CPW) resonators based on titanium nitride (TiN) thin films deposited on 200\,mm diameter high-resistivity Si(100) substrates. We systematically…

We have studied the effect of tensile strain on the superconductivity in FeSe films. 50 nm, 100 nm, and 200 nm FeSe films were grown on MgO, SrTiO$_3$, and LaAlO$_3$ substrates by using a pulsed laser deposition technique. X-ray diffraction…

Raman lasers based on integrated silica whispering gallery mode resonant cavities have enabled numerous applications from telecommunications to biodetection. To overcome the intrinsically low Raman gain value of silica, these devices…

Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…

We have investigated the structural stability of a binary compound TiSn in the zincblende symmetry. The phonon dispersion studies confirms that, TiSn with a nominal composition of 1:1 can exist in zincblende form. No imaginary frequencies…

In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in…

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…

Resistivity and ac magnetic susceptibility measurements on Ba2Sn3Sb6 and SrSn3Sb4 indicate that these Zintl compounds display a transition to a superconducting phase at Tc = 3.9 K. The Meissner effect was observed for Ba2Sn3Sb6 under an…

THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19…

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these…

The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics…

Using a laser plasma accelerator, experiments with a 80 TW and 30 fs laser pulse demonstrated quasi-monoenergetic electron spectra with maximum energy over 0.4 GeV. This is achieved using a supersonic He gas jet and a sharp density ramp…

Membrane external-cavity surface-emitting lasers (MECSELs) are at the forefront of pushing the performance limits of vertically emitting semiconductor lasers. Their simple idea of using just a very thin (hundreds of nanometers to few…

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

We report the ultrafast laser fabrication and mid-IR characterization (3.39 microns) of four-port evanescent field directional couplers. The couplers were fabricated in a commercial gallium lanthanum sulphide glass substrate using…