相关论文: Ultra-low threshold cw and pulsed lasing in tensil…

Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its…

Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device…

In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the…

Continuous-wave squeezed states of light at the wavelength of 1550 nm have recently been demonstrated, but so far the obtained factors of noise suppression still lag behind today's best squeezing values demonstrated at 1064 nm. Here we…

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium-based light emitter that encompasses all the aspects of potential…

As superconducting kinetic inductance detectors (KIDs) continue to grow in popularity for sensitive submillimeter detection and other applications, there is a drive to advance toward lower-loss devices. We present measurements of diagnostic…

Nonlinear optical property of transition metal dichalcogenide (TMDC) nanosheet dispersions, including MoS2, MoSe2, WS2, and WSe2, was performed by using Z-scan technique with ns pulsed laser at 1064 nm and 532 nm. The results demonstrate…

Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a…

Using a high-Q diamond microresonator (Q > 300,000) interfaced with high-power-handling directly-written doped-glass waveguides, we demonstrate a Raman laser in an integrated platform pumped in the near-visible. Both TM-to-TE and TE-to-TE…

This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching frequencies above 14 GHz for the first time. Sezawa mode frequency scaling is…

CeCoIn5 (Co115) thin films have been grown on Al2O3 (000l) substrates through the pulsed laser deposition (PLD). The films are grown mainly along the c-axis, with CeIn3 and In-related alloys. The rock-salt type grains are nucleated, where…

We present here a semiconductor injection laser operating in continuous wave with an emission covering more than one octave in frequency, and displaying homogeneous power distribution among the lasing modes. The gain medium is based on a…

Condensed-matter provides attractive platforms to realize exotic particles, originally proposed in high-energy physics. Weyl semimetal (WSM) is a material in which low-energy collective excitations are governed by massless Weyl fermions,…

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…

We reveal an ultrafast purely electronic phase transition in \TNS, which is a plausible excitonic insulator, after excited by an ultrafast infrared laser pulse. Specifically, the order parameter of the strong electron-hole binding shrinks…

Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration…

Group-IV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides (TMDCs), and black phosphorus (BP). In this paper, we report experimental and theoretical investigations of the…

Semiconductor nanolasers based on micro disks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last decade for on-chip light source applications. However, practical realization of low threshold,…

We study the linear and nonlinear optical properties of wurtzite GaN under c-axial stress field, using density functional theory calculations. The fully structural optimization at each c-axial strain was performed. The calculated dielectric…

The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this…