相关论文: Ultra-low threshold cw and pulsed lasing in tensil…
Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity…
Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from…
We report the first direct femtosecond laser-writing of buried channel waveguides in monocrystalline ZnS. We also report the first single-mode Cr:ZnS depressed cladding buried waveguide laser manufactured by femtosecond laser writing. The…
Pb-chalcogenide colloidal quantum dots (CQDs) are attractive materials to be used as tuneable laser media across the infrared spectrum. However, excessive nonradiative Auger recombination due to the presence of trap states outcompetes light…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency {\eta}wp of Ge-on-Si lasers. Side stressors only turned out to be a more efficient…
We present the results of a systematic analysis of Fe K emission lines in low-luminosity AGNs (LLAGNs) observed with ASCA. We used a sample of LLAGNs with small intrinsic absorption to compare with luminous AGNs and accretion models. Some…
This paper reports on the quasi-three-level continuous wave laser operation based on waveguide structures in neodymium doped calcium niobium gallium garnet disordered crystal. Laser wavelength selection through the waveguide cross section…
Colloidal semiconductor nanocrystals are promising building blocks for optoelectronics due to their solution processability, spectral tunability, and ability to self-assemble into complex architectures. However, their use in lasing…
The current work describes a novel method of growing thin films of stable crystalline ST12-Ge, a high pressure polymorph of Ge, on Si substrate by a non-equilibrium VLS-technique. The study explores the scheme of band engineering of ST12-Ge…
Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd…
We report single-mode lasing in subwavelength GaAs disks under optical pumping. The disks are fabricated by standard photolithography and two steps of wet chemical etching. The simple fabrication method can produce submicron disks with good…
We present a 1.75-GHz self-referenceable frequency comb from a vertical external-cavity surface-emitting laser (VECSEL) passively modelocked with a semiconductor saturable absorber mirror (SESAM). The VECSEL delivers 231-fs pulses with an…
The ongoing miniaturization of semiconductor lasers has enabled ultra-low threshold devices and even provided a path to approach thresholdless lasing with linear input-output characteristics. Such nanoscale lasers have initiated a discourse…
Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly…
We report on the design of a waveguide coupled GeSn microdisk-laser cavity in which the germanium virtual substrate serving as a template for GeSn growth is repurposed for the definition of passive on-chip interconnection waveguides. A main…
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…