相关论文: Ultra-low threshold cw and pulsed lasing in tensil…

GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room…

Ultrafast laser systems operating with high-average power in the wavelength range from 1.9 um to 3 um are of interest for a wide range of applications for example in spectroscopy, material processing and as drivers for secondary sources in…

Controllable doping in AlN and its alloys is essential for deep-ultraviolet light sources. Ionization energies for donors in AlN ($\mathrm{Si_{Al}}$, $\mathrm{S_N}$, $\mathrm{Se_N}$) are high. We report first-principles calculations…

The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified…

GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretically predicted, which profoundly impacts the band structure.…

Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent…

Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies.…

We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates.…

Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility with existing Si-based electronics. Yet, their metastability…

This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By…

Absolute Ar XK (3 keV) and Xe XL (4 keV) photon yields are measured as a function of laser peak intensity, for large (104 - 105 atoms) argon and xenon clusters submitted to intense laser pulses. A clear threshold behavior is observed. The…

We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the…

We present the results of spectroscopic measurements in the extreme ultraviolet (EUV) regime (7-17 nm) of molten tin microdroplets illuminated by a high-intensity 3-J, 60-ns Nd:YAG laser pulse. The strong 13.5 nm emission from this…

The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated…

Biaxial strain effects on electronic structures and thermoelectric properties of monolayer $\mathrm{PtTe_2}$ are investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for the electron part and GGA for…

Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…

Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and…

GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatible with silicon processing standards. These attributes make…

We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse…

Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…