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As interconnect dimensions continue to shrink, the industry-standard copper faces a critical increase in resistivity, presenting a significant hurdle to overall device performance. To overcome this limitation, this work investigates the…

材料科学 · 物理学 2026-03-26 Gyungho Maeng , Subeen Lim , Bonggeun Shong , Yeonghun Lee

Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film…

材料科学 · 物理学 2018-02-23 Shibesh Dutta , Kristof Moors , Michiel Vandemaele , Christoph Adelmann

Ruthenium (Ru) is a promising candidate for the next-generation of electronic interconnects due to its low resistivity, small mean free path, and superior electromigration reliability at nanometer scales. Additionally, Ru exhibits…

超导电性 · 物理学 2025-12-03 Bernardo Langa , Brooke Henry , Ivan Lainez , Richard Haight , Kasra Sardashti

Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based interconnects face a critical challenge, that their resistivity…

材料科学 · 物理学 2026-04-07 Gyungho Maeng , Subeen Lim , Mi Gyoung Lee , Bonggeun Shong , Kyeongjae Cho , Yeonghun Lee

The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use first principles density functional theory based electronic…

材料科学 · 物理学 2016-11-29 Ganesh Hegde , R. Chris Bowen , Mark S. Rodder

The structural and electronic properties of hypothetical Ru$_x$Fe$_{1-x}$Se and Ru$_x$Fe$_{1-x}$Te systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and…

超导电性 · 物理学 2014-12-15 M. J. Winiarski , M. Samsel-Czekała , A. Ciechan

The potential of a wide range of layered ternary carbide and nitride MAX phases as conductors in interconnect metal lines in advanced CMOS technology nodes has been evaluated using automated first principles simulations based on density…

Annealing the Ru metal that typically contains residual carbon impurities offers a facile way to grow graphene on Ru(0001) at the macroscopic scale. Two superstructures of the graphene/Ru(0001) interface with periodicities of 3.0-nm and…

材料科学 · 物理学 2011-11-09 De-en Jiang , Mao-Hua Du , Sheng Dai

The susceptibility to delamination is one of the main concerns in fiber reinforced polymer composites (FRPs). This work demonstrates improvements of 60% in Mode-I fracture toughness after integration of thin (~30 micron), continuous veils…

应用物理 · 物理学 2019-07-15 Yunfu Ou , Carlos González , Juan José Vilatela

Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm<W<52nm) is about 3X that of a Cu wire, whereas the best GNR has…

介观与纳米尺度物理 · 物理学 2015-05-13 Raghunath Murali , Kevin Brenner , Yinxiao Yang , Thomas Beck , James D. Meindl

The miniaturization of electronic devices brings severe challenges in the deposition of metal interconnects in back end of line processing due to a continually decreasing volume available for metal deposition in the interconnect via. Cu is…

材料科学 · 物理学 2025-09-01 Samuel Aldana , Cara-Lena Nies , Michael Nolan

Polycrystalline hcp metals - an important class of engineering materials - typically exhibit complex plasticity because of a limited number of slip systems. Among these metals, deformation is even more complicated in cobalt as it commonly…

Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near)…

介观与纳米尺度物理 · 物理学 2011-09-19 F. Freitag , J. Trbovic , C. Schönenberger

The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show…

Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, the substitution of the interconnect wire…

材料科学 · 物理学 2018-12-13 Christoph Adelmann

The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in…

Ti/Al multilayer thin films with precise thickness have been deposited using a combination of dc and rf magnetron sputtering techniques. Cross-sectional transmission electron microscopy (TEM) revealed unmixed fifteen parallel and alternate…

Macroscopic arrays of highly crystalline nanocarbons offer the possibility of modifying the electronic structure of their low dimensional constituents, for example through doping, and studying the resulting collective bulk behaviour.…

We use transport and neutron scattering to study the electronic phase diagram and spin excitations of NaFe$_{1-x}$Cu$_x$As single crystals. Similar to Co- and Ni-doped NaFeAs, a bulk superconducting phase appears near $x\approx2\%$ with the…

We study the quantum many-body ground states of electrons on the half-filled honeycomb lattice with short- and long-ranged density-density interactions as a model for graphene. To this end, we employ the recently developed truncated-unity…

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