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We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT,…

强关联电子 · 物理学 2009-11-13 Y. J. Chang , J. S. Yang , Y. S. Kim , D. H. Kim , T. W. Noh , D. -W. Kim , E. OH , B. Kahng , J. -S. Chung

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…

An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both…

介观与纳米尺度物理 · 物理学 2009-11-13 R. G. Mani , S. Ramanathan

Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO$_2$) is now finding novel uses in device applications. Two of its most appealing aspects are its…

介观与纳米尺度物理 · 物理学 2016-04-18 M. A. Huber , M. Plankl , M. Eisele , R. E. Marvel , F. Sandner , T. Korn , C. Schüller , R. F. Haglund, , R. Huber , T. L. Cocker

The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades…

介观与纳米尺度物理 · 物理学 2008-10-31 Amos Sharoni , Juan Gabriel Ramírez , Ivan K. Schuller

Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take…

Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…

强关联电子 · 物理学 2015-06-17 Man Gu , Stuart A. Wolf , Jiwei Lu

We conceptualized three-array scalable metasurfaces comprising only three thin strip grids and numerically demonstrated their characteristics in the mid-infrared spectral regime for switchable polarization manipulation and related…

光学 · 物理学 2022-03-25 Andriy E. Serebryannikov , Akhlesh Lakhtakia , Ekmel Ozbay

We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser…

材料科学 · 物理学 2019-06-11 Yang Liu , Shanyuan Niu , Thomas Orvis , Haimang Zhang , Han Wang , Jayakanth Ravichandran

Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…

We present an integrated switch that combines plasmonic and neuromorphic technologies with a single sub-stoichiometric VO2-x nanoparticle. The presented device acts as a versatile plasmonic switch with dual thermal and electrical…

The insulator-to-metal transition (IMT) in strongly correlated materials, such as vanadium dioxide (VO2), offers a transformative platform for next-generation adaptive electronics and neuromorphic computing. However, harnessing this…

The transient high-frequency noise response of two-dimensional MoS2 under abrupt large signal switching field conditions is studied by means of an ensemble Monte Carlo simulator. Low-to-high and high-to-low transitions are analyzed at low…

应用物理 · 物理学 2024-02-13 Jose Manuel Iglesias , Elena Pascual , Sergio Garcia-Sanchez , Raul Rengel

In this work, we report the design of a wavelength-tunable infrared metamaterial by exciting magnetic resonance with phase transition of vanadium dioxide (VO2). Numerical simulation shows a broad absorption peak at the wavelength of 10.9 um…

光学 · 物理学 2014-12-19 Hao Wang , Yue Yang , Liping Wang

We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic…

Vanadium dioxide (VO$_2$) is a strongly-correlated material that exhibits insulator-to-metal transition (IMT) near room temperature, which makes it a promising candidate for applications in nanophotonics or optoelectronics. However,…

Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…

材料科学 · 物理学 2025-07-08 Huandong Chen , Jayakanth Ravichandran

Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance…

材料科学 · 物理学 2024-01-01 Achintya Dutta , Ashok P , Amit Verma

We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

应用物理 · 物理学 2021-02-03 Jake Scoggin , Helena Silva , Ali Gokirmak

Vanadium dioxide (${\rm VO}_2$) is a phase change material (PCM) that exhibits a large change in complex refractive index on the order of unity upon switching from its dielectric to its metallic phase. Although this property is key for the…

应用物理 · 物理学 2018-05-04 Herman M. K. Wong , Amr S. Helmy