相关论文: Accessing MHz Operation at 2 V with Field-Effect T…
Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…
Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation…
The ability to accurately extract low-amplitude voltage signals is crucial in several fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things. The organic electrochemical transistor, which…
Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the…
Superconducting Quantum Interference Filters (SQIF) are promising devices for Radio- Frequency (RF) detection combining low noise, high sensitivity, large dynamic range and wide-band capabilities. Impressive progress have been made recently…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…
Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from…
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
A huge interesting progress in the field of organic electronic materials and devices has been observed in the last decade. However, the understanding of these materials is still a challenge to overcome. Most studies in literature focus on…
In the path toward the integration of organic field effect transistors (OFETs) and logic circuits into low-cost and mass produced consumer products, all-organic devices based on printed semiconductors are one of the best options to meet…
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental…
We report Ultra-High-Frequency (UHF, 800MHz-1GHz) Radio Frequency Identification (RFID) transponders consisting of printed dipole antennas combined with RFID microchips. These are fabricated on Kapton via screen printing and on paper via…
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
An opto--electro--mechanical system formed by a nanomembrane capacitively coupled to an LC resonator and to an optical interferometer has been recently employed for the high--sensitive optical readout of radio frequency (RF) signals [T.…
We have developed a low-loss, ultra-small radio frequency $(RF)$ metamaterial operating at $\sim$76 MHz. This miniaturized medium is made up of planar spiral elements with diameter as small as $\sim$$\lambda$/658 ($\lambda$ is the free…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…