相关论文: Accessing MHz Operation at 2 V with Field-Effect T…
Printed and flexible electronics (PFE) have emerged as the ubiquitous solution for application domains at the extreme edge, where the demands for low manufacturing and operational cost cannot be met by silicon-based computing. Built on…
Frequency-selective wireless power transfer provides a feasible route to enable independent actuation and control of multiple untethered robots in a common workspace; however, the scalability remains unquantified, particularly the maximum…
We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain…
Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
As a method of producing RFID tags, printed graphene provides a low-cost and eco-friendly alternative to the etching of aluminum or copper. The high resistivity of graphene, however, sets a challenge for the antenna design. In practice, it…
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…
The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…
High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these…
Electromagnetic signals in the ultra-low frequency (ULF) range below 3 kHz are well suited for underwater and underground wireless communication thanks to low signal attenuation and high penetration depth. However, it is challenging to…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
Atomically thin, single-crystalline transition metal dichalcogenides (TMDCs) grown via chemical vapor deposition (CVD) on sapphire substrates exhibit exceptional mechanical and electrical properties, positioning them as excellent channel…
Photolithography conventionally requires flat, rigid and stable substrates, limiting its applications in flexible, curved, and transient electronics. In this study, a breakthrough approach is reported that employs a reversibly…
Printed circuit metasurfaces have attracted significant attention in the microwave community for their versatile wavefront manipulation capability. Despite their promising potential in telecommunications and radar applications, few…
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…
The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for…
We present a design for a radio-frequency driver that leverages telecom amplifiers to achieve high power output and wide bandwidth. The design consists of two compact printed circuit boards (total area $< 255$ cm), which incorporate power…
We have investigated the deterioration of field effect transistors based on twodimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were…
The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…
Stochastic switching between the two bistable states of a strongly driven mechanical resonator enables detection of weak signals based on probability distributions, in a manner that mimics biological systems. However, conventional silicon…