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相关论文: Drift velocity saturation and large current densit…

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We study non-linear dc transport in graphene using a hydrodynamic approach and conclude that in clean samples the drift velocity saturates at a weakly density-dependent value v_{sat} ~ 10^7 cm/s. We show that saturation results from the…

其他凝聚态物理 · 物理学 2015-05-13 R. Bistritzer , A. H. MacDonald

A theoretical model is presented for the phonon limited mobility of the Dirac-Fermion gas in a three-dimensional (3D) Dirac semimetal Cd$_3$As$_2$ considering scattering from both the acoustic and the optical phonons. Screening effects are…

材料科学 · 物理学 2019-08-01 S S Kubakaddi

Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift…

We develop a theory for the energy relaxation of hot Dirac fermions in graphene. We obtain a generic expression for the energy relaxation rate due to electron-phonon interaction and calculate the power loss due to both optical and acoustic…

介观与纳米尺度物理 · 物理学 2015-05-13 Wang-Kong Tse , S. Das Sarma

We examine an effect of acoustic phonon scattering on an electric conductivity of single-component molecular conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) with a half-filled band by applying the previous…

材料科学 · 物理学 2020-09-30 Yoshikazu Suzumura , Reizo Kato , Masao Ogata

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission.…

材料科学 · 物理学 2011-09-13 Tian Fang , Aniruddha Konar , Huili Xing , Debdeep Jena

A theory of hot electron cooling power due to polar optical phonons $P_{\rm op}$ is developed in three-dimensional Dirac semimetal($3$DDS) Cd$_3$As$_2$ taking account of hot phonon effect. Hot phonon distribution $N_q$ and $P_{\rm op}$ are…

介观与纳米尺度物理 · 物理学 2018-07-04 Shrishail S. Kubakaddi , Tutul Biswas

The calculated electron mobility for a graphene nanoribbon as a function of applied electric field has been found to have a large threshold field for entering a nonlinear transport regime. This field depends on the lattice temperature,…

介观与纳米尺度物理 · 物理学 2015-05-27 Danhong Huang , Godfrey Gumbs , O. Roslyak

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing…

We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of…

介观与纳米尺度物理 · 物理学 2016-08-24 Jacob B. Khurgin , Sanyam Bajaj , Siddharth Rajan

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…

介观与纳米尺度物理 · 物理学 2013-12-02 Vincent E. Dorgan , Ashkan Behnam , Hiram J. Conley , Kirill I. Bolotin , Eric Pop

We investigate resonant acoustic phonon scattering in the magneto-resistivity of an ultra-high mobility two-dimensional electron gas system subject to DC current in the temperature range 10 mK to 3.9 K. For a DC current density of $\sim$1.1…

介观与纳米尺度物理 · 物理学 2026-01-01 Z. T. Wang , M. Hilke , N. Fong , D. G. Austing , S. A. Studenikin , K. W. West , L. N. Pfeiffer

We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by…

介观与纳米尺度物理 · 物理学 2009-11-13 K. I. Bolotin , K. J. Sikes , Z. Jiang , M. Klima , G. Fudenberg , J. Hone , P. Kim , H. L. Stormer

Hot electron cooling rate P, due to acoustic phonons, is investigated in three-dimensional Dirac fermion systems at low temperature taking account of screening of electron-acoustic phonon interaction. P is studied as a function of electron…

材料科学 · 物理学 2015-12-02 K S Bhargavi , S S Kubakaddi

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…

介观与纳米尺度物理 · 物理学 2013-01-28 S. Das Sarma , E. H. Hwang

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the…

We have simulated the ultra-high-temperature ceramic zirconium carbide (ZrC) in order to predict electron and phonon scattering properties, including lifetimes and transport. Our predictions of heat and charge conductivity, which extend to…

材料科学 · 物理学 2019-04-03 Thomas A. Mellan , Alex Aziz , Yi Xia , Ricardo Grau-Crespo , Andrew I. Duff

We examine the effect of acoustic phonon scattering on the conductivity of two-dimensional Dirac electrons. The temperature ($T$) dependence of the conductivity ($\sigma$) is calculated using the electron Green's function with damping by…

介观与纳米尺度物理 · 物理学 2018-10-31 Yoshikazu Suzumura , Masao Ogata

The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…

介观与纳米尺度物理 · 物理学 2025-01-03 Daryoush Shiri , Reza Nekovei , Amit Verma
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