相关论文: Magneto-memristive switching in a two-dimensional …
Charge density waves (CDWs) are a widespread collective electronic order in quantum materials, furnishing key insights into symmetry breaking and competing phases. However, their dynamic control with external fields remains a pivotal…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
The current efforts to fabricate non-volatile magnetic recording media with a high areal density is deteriorated by the increasing temporal instability of the stored information. If the stored energy per magnetic particle competes with the…
In this review, we outline the important results on the resistivity encountered by an electron in magnetically ordered materials. The mechanism of the collision between the electron and the lattice spins is shown. Experiments on the spin…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performance computing devices seeking to use magnetism as the state…
The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
The magnetoelastic coupling in multiferroic $DyMn_2O_5$ is investigated by magnetostriction measurements along the three crystallographic orientations. Strong lattice anomalies as a function of the magnetic field are detected at the low…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Controlling magnetic moments using electric fields remains a central challenge in spintronics. Multiferroics, where magnetic and electric orders coexist, may be a natural platform for such control, but progress has been limited because…
We study the effect of crystal superstructures, produced by orientational ordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organic conductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistance oscillations…
We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…