相关论文: Magneto-memristive switching in a two-dimensional …
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
We report on the non-linear in-plane electrical transport in coherently grown [La0.7Sr0.3MnO3/SrTiO3] multilayers with ultrathin (< 3 nm) single layers. Current-induced switching of the conductance, with low conductance at larger currents,…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…
A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation,…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…
Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI$_3$ due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moir\'e stacking - with potential…
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
It is now widely accepted that memristive devices are perfect candidates for the emulation of biological synapses in neuromorphic systems. This is mainly because of the fact that like the strength of synapse, memristance of the memristive…
Memristive reservoirs draw inspiration from a novel class of neuromorphic hardware known as nanowire networks. These systems display emergent brain-like dynamics, with optimal performance demonstrated at dynamical phase transitions. In…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been…
Multiferroic tunnel junctions (MFTJs), integrating ferroelectric and ferromagnetic functionalities within a single nanoscale device, hold significant promise for non-volatile, multi-state memory and innovative computing paradigms. In…
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial…
A nanoscale dielectric gap clamped between two metal electrodes may undergo a large resistance change from insulating to highly conducting upon applying an electrical stress. This sudden resistive switching effect is largely exploited in…
We show that the magnetic moment of a composite multiferroic torsional oscillator can be switched by the electric field. The 180$^o$ switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the…