相关论文: Highly symmetric and tunable tunnel couplings in I…

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and…

In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally…

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different…

We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot…

We observe and comprehend the dynamical Coulomb blockade suppression of the electrical conductance across an electronic quantum channel submitted to a temperature difference. A broadly tunable, spin-polarized Ga(Al)As quantum channel is…

A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the…

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…

Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…

We study a hybrid device defined in an InAs nanowire with an epitaxial Al shell that consists of a quantum dot in contact with a superconducting island. The device is electrically floating, prohibiting transport measurements, but providing…

We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…

Controlling tunnel coupling between quantum antidots (QADs) in the quantum Hall (QH) regime is problematic. We propose and demonstrate a scheme for tunable tunnel coupling between two QADs by utilizing a cotunneling process via a localized…

We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…

Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…

Spin properties of two interacting electrons in a quantum dot (QD) embedded in a nanowire with controlled aspect ratio and longitudinal magnetic fields are investigated by using a configuration interaction (CI) method and exact…

We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…

We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni…

The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power…

The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam…

Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…

A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can…