相关论文: Torus Breakdown in a Uni Junction Memristor
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…
We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including…
We present the first study of superconducting nanowires shunted with an external resistor, geared towards understanding and controlling coherence and dissipation in nanowires. The dynamics is probed by measuring the evolution of the V-I…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
Recent development in fabrication technology of planar two-dimensional (2D) materials has brought up possibilities of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate…
Memristors, uniquely characterized by their pinched hysteresis loop fingerprints, have attracted significant research interest over the past decade, due to their enormous potential for novel computation and artificial intelligence…
We perform an analytical investigation of the bifurcation from static to traveling current density filaments in a bistable semiconductor structure with S-shaped current-voltage characteristic. Joule self-heating of a semiconductor structure…
Deep theoretical understanding of the electrical response of Josephson junctions is indispensable regarding both recent discoveries of new kinds of superconductivity and technological advances such as superconducting quantum computers.…
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of…
Our experiments show that for two or more pieces of a wire, of different lengths in general, combined in parallel and connected to a dc source, the current ratio evolves towards unity as the combination is cooled to the superconducting…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
We investigate the transport of a Fermi gas with unitarity-limited interactions across the superfluid phase transition, probing its response to a direct current (dc) drive through a tunnel junction. As the superfluid critical temperature is…
Experimental studies of magnetoresistance in thin superconducting strips subject to a perpendicular magnetic field B exhibit a multitude of transitions, from superconductor to insulator and vice versa alternately. Motivated by this…
A memristor is a two-terminal nanodevice that its properties attract a wide community of researchers from various domains such as physics, chemistry, electronics, computer and neuroscience.The simple structure for manufacturing, small…
The recent design of a nanoscale device with a memristive characteristic has had a great impact in nonlinear circuit theory. Such a device, whose existence was predicted by Leon Chua in 1971, is governed by a charge-dependent…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…
Practical memristor came into picture just few years back and instantly became the topic of interest for researchers and scientists. Memristor is the fourth basic two-terminal passive circuit element apart from well known resistor,…