相关论文: Torus Breakdown in a Uni Junction Memristor

Memristor is the fourth fundamental passive circuit element with potential applications in development of analog memories, artificial brains (with the capacity of hardware training) and neuro-science. In most of these applications the…

We designed and experimentally demonstrated a four-terminal superconducting device which can function as a non-latching (reversible) superconducting switch from the diode regime to the resistive state by applying a control current much…

This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…

We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the…

We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid…

Memristors close the loop for I-V characteristics of the traditional, passive, semi-conductor devices. Originally proposed in 1971, the hunt for the memristor has been going ever since. The key feature of a memristor is that its current…

A graphical representation based on the isothermal current-voltage (IV) measurements of typical memristive interfaces is presented. This is the starting point to extract relevant microscopic information of the parameters that control the…

Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low…

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated.…

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…

Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…

We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…

1T1R (1-transistor-1-resistor) memory crossbar arrays represent a promising solution for compute-in-memory matrix-vector multiplication accelerators and embedded or storage-class memory. However, the size and scaling of these arrays are…

In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…

In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…

This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of…

The nature of the resistive transition for a current applied parallel to the magnetic field in high-Tc materials is investigated by numerical simulation on the three dimensional Josephson junction array model. It is shown by using finite…

We extend the notion of memristive systems to capacitive and inductive elements, namely capacitors and inductors whose properties depend on the state and history of the system. All these elements show pinched hysteretic loops in the two…

Unified virtual oscillator controller (uVOC) inherits the rigorous analytical foundation offered by oscillator based grid-forming (GFM) controllers and enables fast over-current limiting and fault ride-through (FRT). Control design for…