相关论文: Evidence for weak antilocalization-weak localizati…

MXenes stand out from other 2D materials because they combine very good electrical conductivity with hydrophilicity, allowing cost-effective processing as thin films. Therefore, there is a high fundamental interest in unraveling the…

A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered…

Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the…

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…

Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…

We report results of a magneto-transport study on thin films of the topological semi-metal candidate PdSb$_{2}$ (PS). We observe a positive correction to magneto-conductivity at low temperatures, which is a signature of weak…

Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide…

We report thickness dependent metal insulator transition in Ga doped ZnO (Ga:ZnO) thin films grown by pulsed laser deposition technique. From the electrical transport measurements, we find that while the thinnest film exhibits a resistivity…

We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to…

Weak localization and weak anti-localization are quantum interference effects in quantum transport in a disordered electron system. Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with…

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based…

We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more…

We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization…

We study quantum phase coherence and weak localization (WL) in disordered metals with restricted back-scattering and phenomenologically formulate a large class of unconventional transport mechanisms as modified diffusion processes not…

We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low…

A systematic study of the resistivity and Hall effect in single crystal Nd{2-x}Ce{x}CuO{4-d} films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak…

We study the effects of varying the pre-implant film thickness and implant temperature on the electrical and superconducting properties of metal-mixed ion-implanted polymers. We show that it is possible to drive a superconductor-insulator…

Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase…

New materials such as nodal-line semimetals offer a unique setting for novel transport phenomena. Here, we calculate the quantum correction to conductivity in a disordered nodal-line semimetal. The torus-shaped Fermi surface and encircled…

Electron transport in thin metallic wires and films is strongly influenced by the quality of their surface. Weak localization and magnetoconductivity are also sensitive to the electron scattering at the edges of the sample. We study weak…