相关论文: Analysis of Various Transformer Structures for Hig…
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
In this paper, a multilayer thermal infrared detector model has been achieved by finite element method (FEM). All contributions of the thermal conductance were taken into account and calculated. In order to maximize the detector response,…
A review of the present state of investigations of the pseudospin-electron model (PEM), which is used in the theory of strongly correlated electron systems, is given. The model is used to describe the systems with the locally anharmonic…
CMOS-MEMS resonators seamlessly integrated in advanced integrated circuit (IC) technology have the unique capability to enable unprecedented integration of stable frequency references, acoustic spectral processors, and physical sensors.…
Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
We investigate the electrical switching of charge and spin transport in a topological insulator nanoconstriction in a four terminal device. The switch of the edge channels is caused by the coupling between edge states which overlap in the…
Flux transformers are the necessary component of all superconductor digital integrated circuits utilizing ac power for logic cell excitation and clocking, and flux biasing, e.g., Adiabatic Quantum Flux Parametron (AQFP), Reciprocal Quantum…
Frequency multipliers, a class of essential electronic components, play a pivotal role in contemporary signal processing and communication systems. They serve as crucial building blocks for generating high-frequency signals by multiplying…
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of…
In semiconductor superlattices, when Bragg oscillating electrons interact with an input electromagnetic field, frequency multiplication is possible. An ideal superlattice has a purely antisymmetric voltage current response and can thus…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
The accurate electromagnetic modeling of both low- and high-frequency physics is crucial in the signal and power integrity analysis of electrical interconnects. The boundary element method (BEM) is appealing for lossy conductor modeling…
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…
In multi-qubit superconducting systems utilizing flip-chip technology, achieving high accuracy in resonator frequencies is of paramount importance, particularly when multiple resonators share a common Purcell filter with restricted…
Dependence of transition frequencies on the fine structure constant $\alpha=e^2/\hbar c$ is calculated for several many-electron systems which are used or planned to be used in the laboratory search for the time variation of the fine…
A FEM application for the accurate design of composite backing of ultrasonic transducers is presented. The idea is to obtain the dependence between the volume ratio of the tungsten powder in an epoxy matrix used as a backing and the final…
Modeling power electronic converters at frequencies close to or above half the switching frequency has been difficult due to the time-variant and discontinuous switching actions. This paper uses the properties of moving Fourier coefficients…
Motivated by potential applications in spintronics, we study frequency dependent spin transport in nonitinerant one-dimensional spin chains. We propose a system that behaves as a capacitor for the spin degree of freedom. It consists of a…
We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed…
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…