相关论文: A Two Dimensional Tunneling Resistance Transmissio…

As semiconductor devices approach the sub-2 nm technology node, identifying the quantum-mechanical limits of contact-resistance scaling becomes imperative; however, the transition from thermionic emission to direct tunneling in this deep…

Electrical contacts between nano-engineered systems are expected to constitute the basic building blocks of future nano-scale electronics. However, the accurate characterization and understanding of electrical contacts at the nano-scale is…

Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D…

Strongly correlated transport of interacting electrons through the one-dimensional tunnel contact is considered within the Luttinger liquid model of one-dimensional electrodes on arbitrary time scales $ t> \hbar /\Lambda_{g} $. Using…

We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats…

Tunneling two level systems affect damping, noise and decoherence in a wide range of devices, including nanoelectromechanical resonators, optomechanical systems, and qubits. Theoretically this interaction is usually described within the…

Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with…

We address the problem of modeling termination resistances which are largely responsible for the uneven distribution of currents in superconducting cables. For such purpose we present three DC models. In a first model a 0D circuit-like…

Although the two-dimensional model of random networks of metallic nanowires or carbon nanotubes is widely used, it significantly overestimates the number of contacts between elements compared to quasi-three-dimensional models. This, within…

Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates…

We have studied the influence of the transverse size of a magnetic tunnel nanojunction on the magnitude of the magnetoresistance. During modeling, the size of the right contact was fixed, while the size of the left one gradually changed…

We derive and evaluate expressions for the low temperature {\it dc} equilibrium tunneling conductance between parallel two-dimensional electron systems. Our theory is based on a linear-response formalism and on impurity-averaged…

We study the relationship between the differential conductance and the local density of states in tight-binding tunnel junctions where the junction' geometry can be varied between the point-contact and the planar-contact limits. The…

We have studied the electrical conductivity of two-dimensional nanowire networks. An analytical evaluation of the contribution of tunneling to their electrical conductivity suggests that it is proportional to the square of the wire…

We theoretically investigate resonant tunneling through a linear array of quantum dots with subsequent tunnel coupling. We consider two limiting cases: (i) strong Coulomb blockade, where only one extra electron can be present in the array…

We develop a linear theory of electron transport for a system of two identical quantum wires in a wide range of the wire length L, unifying both the ballistic and diffusive transport regimes. The microscopic model, involving the interaction…

The theoretical model of the short-range interacting Luttinger liquid predicts a power-law scaling of the density of states and the momentum distribution function around the Fermi surface, which can be readily tested through tunneling…

A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for…

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…

Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the…