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The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…

材料科学 · 物理学 2021-12-15 A. S. Vokhmintsev , I. A. Petrenyov , R. V. Kamalov , I. A. Weinstein

Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm are synthesized using the anodic oxidation of titanium foil. Four sets of memristors with 100 ${\mu}m$ diameter based on Ti/TiO2-NT/Au sandwich structures with an…

材料科学 · 物理学 2019-06-18 I. B. Dorosheva , A. S. Vokhmintsev , R. V. Kamalov , A. O. Gryaznov , I. A. Weinstein

We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…

Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky…

Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…

介观与纳米尺度物理 · 物理学 2019-02-21 Yang Lu , I-Wei Chen

The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…

硬件体系结构 · 计算机科学 2023-09-22 Laura Bégon-Lours , Mattia Halter , Youri Popoff , Zhenming Yu , Donato Francesco Falcone , Bert Jan Offrein

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…

Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through…

It has been known that an anti-unitary symmetry such as time-reversal or charge conjugation is needed to realize Z2 topological phases in non-interacting systems. Topological insulators and superconducting nanowires are representative…

介观与纳米尺度物理 · 物理学 2015-04-22 Ken Shiozaki , Masatoshi Sato , Kiyonori Gomi

In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies and thickness on the memristive characteristics were…

应用物理 · 物理学 2017-05-17 Fatih Gul , Hasan Efeoglu

Using the first-principles density-functional theory plan-wave pseudopotential method, we investigate the structure and magnetism in 25% Mn substitutive and interstitial doped monoclinic, tetragonal and cubic ZrO2 systematically. Our…

材料科学 · 物理学 2015-05-13 Xingtao Jia , Wei Yang , Minghui Qin , Jianping Li

Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…

介观与纳米尺度物理 · 物理学 2025-10-28 Tongxin Chen , Yinyu Nie , Yafei Hao , Shengchun Shen , Jiajun Pan , Xiaoguang Li , Yuan Lu

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…

介观与纳米尺度物理 · 物理学 2016-12-21 Cheng-Chih Hsieh , Anupam Roy , Yao-Feng Chang , Davood Shahrjerdi , Sanjay K. Banerjee

Construction and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of…

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…

This article proposes a general approach to the simulation and design of a multilayer perceptron (MLP) network on the basis of cross-bar arrays of metal-oxide memristive devices. The proposed approach uses the ANNM theory, tolerance theory,…

2:17 SmCo magnets with a quinary composition of Sm(Co,Cu,Fe,Zr)$_{7+{\delta}}$ are industrially relevant hard magnets used in high temperature and corrosive environments. Their complex cellular/lamellar nanostructure, consisting of ordered…

High-quality single crystals of EuAuAs were studied by means of powder x-ray diffraction, magnetization, magnetic susceptibility, heat capacity, electrical resistivity and magnetoresistance measurements. The compound crystallizes with a…

强关联电子 · 物理学 2022-08-23 S. Malick , J. Singh , A. Laha , V. Kanchana , Z. Hossain , D. Kaczorowski

Zintl phases, containing strongly covalently bonded frameworks with separate ionically bonded ions, have emerged as a critical materials family in which to couple magnetism and strong spin-orbit coupling to drive diverse topological phases…

In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method.…

应用物理 · 物理学 2025-12-29 Kerem Karatas , Bunyamin Ozkal , Abdullah H. Cosar , Sinan Kazan
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