相关论文: Offset fields in perpendicularly magnetized tunnel…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
We demonstrate spin torque induced auto-oscillation in MgO-based magnetic tunnel junctions. At the generation threshold, we observe a strong line narrowing down to 6 MHz at 300K and a dramatic increase in oscillator power, yielding…
In twisted bilayer graphene (TBLG), chiral tunneling can be tuned by parameters such as the twist angle, barrier height, and Fermi energy. This differs from the tunneling behavior observed in monolayer and Bernal bilayer graphene, where…
We study the effect of strain on magnetic tunnel junctions (MTJ) induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function…
Two antiferromagnetically coupled tunneling systems is a minimal model exhibiting the effect of quantum-mechanical phase in the Landau-Zener effect. It is shown that the averaged staying probability oscillates vs resonance shift between the…
Recent research on CoPd alloys with perpendicular magnetic anisotropy (PMA) has suggested that they might be useful as the pinning layer in CoFeB/MgO-based perpendicular magnetic tunnel junctions (pMTJ's) for various spintronic applications…
Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered…
Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic…
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel…
Magnetization relaxation of exchange biased (Pt/Co)5/Pt/IrMn multilayers with perpendicular anisotropy was investigated by time-resolved Kerr microscopy. Magnetization reversal occurs by nucleation and domain wall propagation for both…
Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the…
We present results of a set of experiments to investigate the effect of dissipative external electromagnetic environment on tunneling in linear arrays of junctions in the weak tunneling regime. The influence of this resistance decreases as…
Ferromagnetism is typically discussed in terms of the exchange interaction and magnetic anisotropies. Yet real samples are inevitably affected by the magnetostatic dipole-dipole interaction. Because of this interaction, a theorem (R.B.…
We study resonant tunnelling effects that can occur in tri-layer structures featuring a dielectric layer sandwiched between two magneto-optical-metal layers. We show that the resonance splitting associated with these phenomena can be…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…
We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to…
Superconductor-ferromagnet-superconductor Josephson junctions are known to exist in the $0$ and $\pi$ states with the transitions between them controlled by the temperature and ferromagnetic interlayer thickness. We demonstrate that these…
We have studied the magnetization reversal dynamics of FeNi/Al$\_2$O$\_3$/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and time-resolved x-ray photoelectron emission microscopy…