相关论文: Offset fields in perpendicularly magnetized tunnel…
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel…
We show that, in a magnetic field parallel to the 2D electron layer, strong electron correlations change the rate of tunneling from the layer exponentially. It results in a specific density dependence of the escape rate. The mechanism is a…
We present a semiclassical study of a transport process, the tunneling, in the presence of a magnetic field and a dissipative environment. We have found that the problem can be mapped onto an effective one-dimensional one, and the tunneling…
Random hyperfine fields are essential to mechanisms of low-field magnetoresistance in organic semiconductors. Recent experiments have shown that another type of random field --- fringe fields due to a nearby ferromagnet --- can also…
Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…
A La0.75Ca0.25MnO3-film grown by metalorganic aerosol deposition technique was investigated by scanning tunnelling microscopy and spectroscopy. A small spot was found on the surface which exhibits the expected magnetic field dependence of…
We consider an effect of a strong magnetic field on the ground state and macroscopic coherent tunneling in small antiferromagnetic particles with uniaxial and biaxial single-ion anisotropy. We find several tunneling regimes that depend on…
A quantum statistical theory of spin-dependent tunneling through asymmetric magnetic double barrier junctions is presented which describes $both$ ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the…
The effect of a parallel magnetic field $B$ and a potential substrate on the transmission, conductivity, and Fano factor of a biased ABC-stacked $pn$ and $pnp$ trilayer graphene junction (ABC-TLG) is investigated theoretically at low…
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…
Stripe domains are studied in perpendicular magnetic anisotropy films nanostructured with a periodic thickness modulation that induces the lateral modulation of both stripe periods and inplane magnetization. The resulting system is the 2D…
We show that, contrary to common belief, the depolarizing electric field generated by bound charges at thin-film surfaces can have a substantial impact on the domain structure of an improper ferroelectric with topological defects. In…
Different mechanisms of spin-dependent tunneling are analyzed with respect to their role in tunnel magnetoresistance (TMR). Microscopic calculation within a realistic model shows that direct tunneling in iron group systems leads to about a…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
We study the conductance oscillation of an antiferromagnetic layer tunnel junction composed of antiferromagnetic topological insulators (MTIs) such as MnBi$_{2}$Te$_{4}$. In presence of an in-plane magnetic field, we find that the two…
Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
Exchange coupling between two magnetic layers through an interlayer is of broad interest for numerous recent applications of nano-magnetic systems. In this Letter we study ferromagnetic exchange coupling through amorphous paramagnetic Fe-Ta…
We use first-principles calculations to investigate the band structure evolution of W$X_2$/Mo$X_2$ ($X$ = S, Se) heterobilayers under a perpendicular electric field. We characterize the extent to which the type-II band alignment in these…
The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…