相关论文: Offset fields in perpendicularly magnetized tunnel…
Magnetic shape memory alloys exhibit a hierarchically twinned microstructure, which has been well examined in epitaxial Ni-Mn-Ga films. Here we analyze consequences of this twin within twins microstructure on the magnetic domain pattern.…
A detailed interface study was conducted on a Fe/MgO/Fe system using laser assisted 3D atom probe. It exhibits an additional oxide formation at the second interface of the multilayer structure independent of laser wavelength, laser fluence…
The electronic transport of graphene p-n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus…
We present an experimental and theoretical study of the magnetic field dependence of the mode frequency of thermally excited spin waves in rectangular shaped nanopillars of lateral sizes 60x100, 75x150, and 105x190 nm2, patterned from…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
Systematic displacement measurements of freestanding graphene as a function of applied bias voltage and tunneling current setpoint using scanning tunneling microscopy (STM) are presented. When the bias voltage is increased the graphene…
The magnetic field effect in the Josephson tunneling between two d-wave superconductors are investigated. When the crystal orientation of one (or each) superconductor relative to the interface normal is such that midgap states exist at the…
The influence of an inhomogeneous magnetic field on the magnetoresistance of thin Al films, used in different superconductor/ferromagnet hybrids, has been investigated. Two contrasting magnetic textures with out-of-plane magnetization are…
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies…
Ferroelectric nanostructures can be formed by local switching of domains using techniques such as piezo-force microscopy (PFM). Understanding lateral size effects is important to determine the minimum feature size for writing ferroelectric…
The oscillation properties of a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are studied based on an analysis of the energy balance between spin torque and damping. The…
Perpendicularly magnetized films showing small saturation magnetization, $M_\mathrm{s}$, are essential for spin-transfer-torque writing type magnetoresistive random access memories, STT-MRAMs. An intermetallic compound, {(Mn-Cr)AlGe} of the…
We investigate theoretically the spin-independent tunneling magnetoresistance effect in a graphene monolayer modulated by two parallel ferromagnets deposited on a dielectric layer. For the parallel magnetization configuration, Klein…
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…
We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are…
We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…
We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to…
We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…