相关论文: Offset fields in perpendicularly magnetized tunnel…
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential…
We present a detailed numerical analysis of the effect of a magnetic field on the transport properties of a `small-$N$' one-sided surface disordered wire. When time reversal symmetry is broken due to a magnetic field $B$, we find a strong…
MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared…
Magnetic layers are narrow regions where the field direction changes sharply. They often occur in the association with neutral points of the magnetic field. We show that an organised field can produce these structures near a rotating black…
We report experimental evidence of the effect of an applied magnetic field on the non-thermal magnetic relaxation in a disk-shaped type-I lead superconductor. The time evolution of the irreversible magnetization proves to be logarithmic for…
Studies of the magnetic interference of sandwich-type Josephson junctions in which perpendicular or oblique magnetic fields are applied to the junction plane have received less attention than those where the applied magnetic fields are…
Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of…
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in…
We present an {\it ab-initio} study of the spin-transfer torque in a Fe/MgO/FePt/Fe magnetic tunnel junctions. We consider a FePt film with a thickness up to six unit cells, either in direct contact with the MgO spacer or with an…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
Tunneling from a two-dimensional contact into quantum-Hall edges is considered theoretically for a case where the barrier is extended, uniform, and parallel to the edge. In contrast to previously realized tunneling geometries, details of…
The issue of the decoupling of extreme type-II superconducting thin films ($\lambda_L\rightarrow\infty$) with weakly Josephson-coupled layers in magnetic field parallel to the layers is considered via the corresponding frustrated $XY$ model…
We study the magnetization dynamics in ferromagnet$\mid$insulator$\mid$ferromagnet and ferromagnet$\mid$insulator$\mid$normal metal ultra-small tunnel junctions, and the associated voltage drop in the presence of an electromagnetic…
The formation of self-consistent crystalline structure is a well-known phenomenon in complex plasmas. In most experiments the pressure and rf power are the main controlling parameters in determining the phase of the system. We have studied…
The effect of the zero centered Gaussian random magnetic field distribution on the phase diagrams and ground state magnetizations of the transverse Ising thin film has been investigated. As a formulation, the differential operator technique…
The influences of optical fields on the tunneling time in graphene are investigated in real time using the finite-difference time-domain method. The tunneling time of electrons irradiated by an optical field is significantly different from…
Magnetic barriers in two-dimensional electron gases are shifted in B space by homogeneous, perpendicular magnetic fields. The magnetoresistance across the barrier shows a characteristic asymmetric dip in the regime where the polarity of the…
Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a Magnetic Tunnel Junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier.…