相关论文: Offset fields in perpendicularly magnetized tunnel…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is particularly undesirable for magnetic random access memory applications…
We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during the RF…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
We have measured the bias voltage and field dependence of eigenmode frequencies in a magnetic tunnel junction with MgO barrier. We show that both free layer (FL) and reference layer (RL) modes are excited, and that a cross-over between…
We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The…
Here, we present an analytical and numerical model describing the magnetization dynamics in MgO-based spin-torque nano-oscillators with an in-plane magnetized polarizer and an out-of-plane free layer. We introduce the spin-transfer torque…
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite…
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel…
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…
The influence of a magnetic field on the tunneling of an electron out of a confining plane is studied by a path integral method. We map this 3-d problem on to a 1-d one, and find that the tunneling is strongly affected by the field. Without…
We investigate tunneling decay in a magnetic field. Because of broken time-reversal symmetry, the standard WKB technique does not apply. The decay rate and the outcoming wave packet are found from the analysis of the set of the particle…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
We have carried out a detailed experimental investigation of the static properties of planar Josephson tunnel junctions in presence of a uniform external magnetic field applied in an arbitrary orientation with respect to the barrier plane.…